STD3LN80K5

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STD3LN80K5

+Nomenclature

MOSFET N-CH 800V 2A DPAK

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Spécifications

Attribut Valeur
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series MDmesh™
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain(Id) @ 25°C 2A (Tc)
Drive Voltage(Max Rds On Min Rds On) 10V
Rds On(Max) @ Id Vgs 3.25Ohm @ 1A, 10V
Vgs(th)(Max) @ Id 5V @ 100µA
Gate Charge(Qg)(Max) @ Vgs 2.63 nC @ 10 V
Vgs(Max) ±30V
Input Capacitance(Ciss)(Max) @ Vds 102 pF @ 100 V
Power Dissipation (Max) 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK

Présentation

Description

The STD3LN80K5 is an N-channel MOSFET designed for high-voltage, high-speed switching applications. Key features include:
- Voltage Rating: 800V drain-source voltage (VDSS), suitable for power electronics.
- Current Handling: Up to 3A continuous drain current (ID).
- Low On-Resistance: RDS(on) of 3.5Ω (typ.), improving efficiency.
- Fast Switching: Optimized for applications like power supplies, inverters, and motor control.
- Package: TO-252 (DPAK), offering good thermal performance.
It is commonly used in AC-DC converters, LED drivers, and industrial systems requiring reliable high-voltage switching. Always refer to the datasheet for detailed specifications and application guidelines.

Equivalent

The STD3LN80K5 is a 800V, 3A N-channel MOSFET. Equivalent or similar products include:
- STP3NK80ZFP (STMicroelectronics)
- IRFBE30 (Infineon)
- FQPF3N80C (Fairchild/ON Semi)
- 2SK3562 (Toshiba)
These alternatives offer comparable voltage, current ratings, and package options. Verify datasheets for exact specifications before substitution.

Features

The STD3LN80K5 is an N-channel MOSFET with the following key features:
- Voltage Rating: 800V (high-voltage capability)
- Current Rating: 3A (continuous drain current)
- Low On-Resistance (RDS(on)): 3.5Ω (typ.) for reduced conduction losses
- Fast Switching: Optimized for high-speed applications
- Low Gate Charge (Qg): Enhances efficiency in switching circuits
- Avalanche Energy Rated: Improved ruggedness in inductive loads
- Package: TO-252 (DPAK) for efficient thermal performance
- Applications: SMPS, lighting, motor control, and power converters
This MOSFET is designed for high-voltage, low-power switching with efficient thermal management.

Pinout

The STD3LN80K5 is a 3-pin N-channel MOSFET designed for high-voltage switching applications.
Pin Functions:
1. Gate (G): Controls the switching operation.
2. Drain (D): Connects to the load (high-voltage side).
3. Source (S): Ground reference (low-voltage side).
Key Features:
- 800V drain-source voltage (VDSS).
- Low on-resistance (RDS(on)) for efficient power handling.
- Commonly used in power supplies, inverters, and motor control.
This MOSFET is packaged in TO-252 (DPAK), a surface-mount design for compact PCB integration.

Manufacturer

The STD3LN80K5 is a power MOSFET manufactured by STMicroelectronics, a multinational semiconductor company based in Switzerland. STMicroelectronics specializes in designing and producing a wide range of semiconductor solutions, including microcontrollers, sensors, power devices, and analog ICs, serving industries like automotive, industrial, and consumer electronics. Known for innovation and reliability, the company is a key player in the global semiconductor market.
The STD3LN80K5 is part of their MDmesh™ K5 series, optimized for high-efficiency power conversion applications.

Package

The STD3LN80K5 is a N-channel MOSFET typically available in a TO-252 (DPAK) surface-mount package. This package is compact, suitable for high-power applications, and features a tab for heat dissipation. It is commonly used in switching power supplies, motor control, and other high-efficiency circuits. The TO-252 package ensures good thermal performance and ease of PCB mounting.

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