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STB24N60M2
+NomenclatureMOSFET N-CH 600V 18A D2PAK
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FabricantSemi - conducteurs optiques
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Pièce fabricant #STB24N60M2
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Fiche technique STB24N60M2 DataSheet
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En stock29737
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Spécifications
| Attribut | Valeur |
| Series | MDmesh™ II Plus |
| Part Status | Active |
| Base Product Number | STB24 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Vgs (Max) | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 100 V |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263 (D2PAK) |
| Package | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
Présentation
Description
The STB24N60M2 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics, designed for high-efficiency applications in power conversion. It belongs to the MDmesh™ M2 series, known for its low on-resistance and fast switching capabilities, making it suitable for applications like switched-mode power supplies (SMPS).
Key features of the STB24N60M2 include:
- Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 24A.
- Low On-Resistance: Ensures minimal power loss and high efficiency.
- Fast Switching: Facilitates high-frequency operations, improving overall performance in power applications.
- Package Type: Typically available in a D²PAK (TO-263) package, offering good thermal performance.
The STB24N60M2 is often used in applications requiring efficient power management, such as power adapters, LED lighting, and industrial power supplies. Its efficient design helps reduce energy consumption and enhances system reliability.
Key features of the STB24N60M2 include:
- Voltage and Current Ratings: It has a drain-source voltage (V_DS) of 600V and a continuous drain current (I_D) of 24A.
- Low On-Resistance: Ensures minimal power loss and high efficiency.
- Fast Switching: Facilitates high-frequency operations, improving overall performance in power applications.
- Package Type: Typically available in a D²PAK (TO-263) package, offering good thermal performance.
The STB24N60M2 is often used in applications requiring efficient power management, such as power adapters, LED lighting, and industrial power supplies. Its efficient design helps reduce energy consumption and enhances system reliability.
Equivalent
The STB24N60M2 is a power MOSFET, and its equivalents can include other MOSFETs with similar specifications, such as voltage, current, and Rds(on). Possible equivalents include:
1. IPP60R190P6 (Infineon)
2. FDPF42N60NZ (ON Semiconductor)
3. IRFPG50 (International Rectifier)
4. TK20A60U (Toshiba)
5. 20N60C3 (Infineon)
Always verify the specifications and compatibility with your application.
1. IPP60R190P6 (Infineon)
2. FDPF42N60NZ (ON Semiconductor)
3. IRFPG50 (International Rectifier)
4. TK20A60U (Toshiba)
5. 20N60C3 (Infineon)
Always verify the specifications and compatibility with your application.
Features
The STB24N60M2 is an N-channel Power MOSFET designed for high-efficiency applications. It features a 600V drain-source breakdown voltage and a continuous drain current of up to 24A. Key attributes include a low on-resistance (R_DS(on)) for reduced conduction losses and efficient power handling. The MOSFET is built using the MDmesh M2 technology, which enhances switching performance and minimizes energy loss during operation. It has a fast recovery body diode, suitable for high-frequency switching applications. The device comes in a D2PAK package, offering excellent thermal performance and ease of mounting on a PCB. Additionally, it is avalanche rugged, ensuring reliability in demanding applications. These features make the STB24N60M2 ideal for use in power supplies, motor controls, and various other industrial and consumer electronics where efficiency and reliability are critical.
Pinout
The STB24N60M2 is a power MOSFET transistor. It typically comes in a TO-220 package, which has three pins. The pin configuration and functions are as follows:
1. Gate (G): This pin is used to control the transistor's switching state. By applying a voltage to the gate, the MOSFET is turned on or off.
2. Drain (D): This is the pin through which the main current flows when the transistor is in the "on" state. It is connected to the load.
3. Source (S): This pin is connected to the ground or the negative supply voltage. The current flows from the drain to the source when the MOSFET is activated.
The STB24N60M2 is designed for high-voltage applications and is used in various power switching applications due to its ability to handle up to 600 volts and 24 amperes of continuous current.
1. Gate (G): This pin is used to control the transistor's switching state. By applying a voltage to the gate, the MOSFET is turned on or off.
2. Drain (D): This is the pin through which the main current flows when the transistor is in the "on" state. It is connected to the load.
3. Source (S): This pin is connected to the ground or the negative supply voltage. The current flows from the drain to the source when the MOSFET is activated.
The STB24N60M2 is designed for high-voltage applications and is used in various power switching applications due to its ability to handle up to 600 volts and 24 amperes of continuous current.
Manufacturer
The STB24N60M2 is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a broad range of semiconductor products. The company operates in various sectors, including industrial, automotive, personal electronics, communications equipment, and computers, serving customers across multiple industries worldwide. STMicroelectronics is known for its expertise in integrated circuits, microcontrollers, sensors, power devices, and various other semiconductor technologies. The company aims to provide innovative solutions to address the needs of its diverse customer base, contributing to advancements in technology and electronics.
Application
The STB24N60M2 is a power MOSFET commonly used in various applications. Its primary application areas include:
1. Switching Power Supplies: Used for efficient power conversion in SMPS.
2. Motor Control: Employed in drive circuits for controlling motors in industrial and consumer applications.
3. Inverters: Utilized in inverter circuits for renewable energy systems like solar and wind.
4. Lighting: Suitable for LED and other lighting applications for efficient power management.
5. Uninterruptible Power Supplies (UPS): Used in UPS systems for reliable backup power.
Its characteristics, such as high voltage and current handling capabilities, make it suitable for demanding and high-efficiency applications.
1. Switching Power Supplies: Used for efficient power conversion in SMPS.
2. Motor Control: Employed in drive circuits for controlling motors in industrial and consumer applications.
3. Inverters: Utilized in inverter circuits for renewable energy systems like solar and wind.
4. Lighting: Suitable for LED and other lighting applications for efficient power management.
5. Uninterruptible Power Supplies (UPS): Used in UPS systems for reliable backup power.
Its characteristics, such as high voltage and current handling capabilities, make it suitable for demanding and high-efficiency applications.
Package
The STB24N60M2 is a N-channel MOSFET, and its package type is D2PAK (also known as TO-263). This package is designed for surface mounting and is commonly used in power applications due to its excellent thermal performance and compact size.
