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SSM3J356R
+NomenclatureToshiba
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FabricantToshiba
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Pièce fabricant #SSM3J356R
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En stock9919
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Spécifications
| Attribut | Valeur |
Présentation
Description
The SSM3J356R is a P-channel MOSFET from Toshiba, designed for low-voltage, high-efficiency switching applications. Key features include:
- Low on-resistance (RDS(on)): ~0.18Ω (max) at VGS = -4.5V, reducing power loss.
- Compact package: SOP-8 (SMV), suitable for space-constrained designs.
- Voltage rating: -30V (VDSS), ideal for 12V–24V systems.
- Fast switching: Optimized for power management in portable devices, load switches, and DC-DC converters.
Common uses include battery protection, power distribution, and motor control. Its low threshold voltage (VGS(th) ~ -1V) ensures compatibility with logic-level signals.
For detailed specs, refer to Toshiba’s datasheet.
- Low on-resistance (RDS(on)): ~0.18Ω (max) at VGS = -4.5V, reducing power loss.
- Compact package: SOP-8 (SMV), suitable for space-constrained designs.
- Voltage rating: -30V (VDSS), ideal for 12V–24V systems.
- Fast switching: Optimized for power management in portable devices, load switches, and DC-DC converters.
Common uses include battery protection, power distribution, and motor control. Its low threshold voltage (VGS(th) ~ -1V) ensures compatibility with logic-level signals.
For detailed specs, refer to Toshiba’s datasheet.
Features
The SSM3J356R is a P-channel MOSFET with the following key features:
- Voltage Rating: -30V (Drain-Source)
- Current Rating: -5.7A (Continuous Drain Current)
- Low On-Resistance: 35mΩ (max) @ VGS = -10V
- Fast Switching: Low gate charge (Qg = 18nC typ)
- Compact Package: SOP-8 (SM8) for space-saving designs
- Low Threshold Voltage: VGS(th) = -1V (typ) for efficient low-voltage operation
- Applications: Power management, load switching, battery protection
It offers high efficiency and reliability in compact circuits.
- Voltage Rating: -30V (Drain-Source)
- Current Rating: -5.7A (Continuous Drain Current)
- Low On-Resistance: 35mΩ (max) @ VGS = -10V
- Fast Switching: Low gate charge (Qg = 18nC typ)
- Compact Package: SOP-8 (SM8) for space-saving designs
- Low Threshold Voltage: VGS(th) = -1V (typ) for efficient low-voltage operation
- Applications: Power management, load switching, battery protection
It offers high efficiency and reliability in compact circuits.
Pinout
The SSM3J356R is a P-channel MOSFET with 3 pins (SOT-23 package).
Pin Functions:
1. Gate (G): Controls the switching operation.
2. Source (S): Connected to the power supply (typically positive).
3. Drain (D): Connects to the load.
Key Features:
- Low on-resistance (RDS(on)).
- Designed for power switching in portable devices.
- Voltage rating: -30V (VDSS).
Used in load switches, power management, and battery protection circuits.
Pin Functions:
1. Gate (G): Controls the switching operation.
2. Source (S): Connected to the power supply (typically positive).
3. Drain (D): Connects to the load.
Key Features:
- Low on-resistance (RDS(on)).
- Designed for power switching in portable devices.
- Voltage rating: -30V (VDSS).
Used in load switches, power management, and battery protection circuits.
Application
The SSM3J356R is a P-channel MOSFET commonly used in:
1. Power Management – Switching and load control in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. Automotive Electronics – Power distribution and motor control.
4. Consumer Electronics – Power switches in smartphones, tablets, and wearables.
5. Industrial Applications – Low-voltage power switching.
Its low on-resistance (RDS(on)) and compact package (SOT-23) make it ideal for space-constrained, energy-efficient designs.
1. Power Management – Switching and load control in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. Automotive Electronics – Power distribution and motor control.
4. Consumer Electronics – Power switches in smartphones, tablets, and wearables.
5. Industrial Applications – Low-voltage power switching.
Its low on-resistance (RDS(on)) and compact package (SOT-23) make it ideal for space-constrained, energy-efficient designs.
