SNRVBD660CTT4G

Images à titre indicatif uniquement

SNRVBD660CTT4G

+Nomenclature

DIODE ARRAY SCHOTTKY 60V 3A DPAK

  • FabricantSemi - conducteurs

  • Pièce fabricant #SNRVBD660CTT4G

  • Package DPAK-3

  • En stock3410

365 Garantie qualité 24h/24

7*24 Garantie de service 24h/24

90-Garantie après-vente 24h/24

Garantie produit authentique

Spécifications

Attribut Valeur
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series SWITCHMODE™
Part Status Active
Diode Configuration 1 Pair Common Cathode
Diode Type Schottky
Voltage - DC Reverse (Vr) (Max) 60 V
Current - Average Rectified(Io)(per Diode) 3A
Voltage - Forward (Vf) (Max) @ If 700 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 100 µA @ 60 V
Operating Temperature - Junction -65°C ~ 175°C
Mounting Type Surface Mount

Présentation

Description

The SNRVBD660CTT4G is a high-performance Schottky barrier rectifier diode from ON Semiconductor. Key features include:
- Voltage Rating: 60V
- Current Rating: 6A (average forward current)
- Low Forward Voltage Drop: ~0.49V (typical at 3A)
- Fast Switching: Ideal for high-frequency applications
- Package: TO-252-3 (DPAK), surface-mountable
Designed for efficiency in power supplies, DC-DC converters, and reverse polarity protection, it minimizes power loss and heat generation. Its Schottky technology ensures rapid recovery, reducing switching noise.
Applications include:
- Switching power supplies
- Automotive systems
- Solar inverters
- Consumer electronics
For detailed specs, refer to the datasheet.

Features

The SNRVBD660CTT4G is a high-performance Schottky barrier diode with the following key features:
- Low Forward Voltage Drop (VF): Ensures minimal power loss and high efficiency.
- High Current Capability: Supports up to 6A continuous forward current.
- Fast Switching: Optimized for high-speed applications.
- Low Reverse Leakage Current: Enhances reliability and thermal performance.
- High Surge Current Tolerance: Robust against transient overloads.
- Compact Package: Available in TO-277B (SMB Flat Lead) for space-saving designs.
- Wide Operating Temperature Range: Typically -55°C to +150°C.
Ideal for power rectification, DC-DC converters, and reverse polarity protection in automotive, industrial, and consumer electronics.

Manufacturer

The SNRVBD660CTT4G is a Schottky diode manufactured by ON Semiconductor, a leading global supplier of power management, analog, and sensor solutions.
ON Semiconductor is a Fortune 500 company specializing in energy-efficient technologies for automotive, industrial, and consumer applications. Known for high-quality semiconductor components, it serves industries requiring reliable power and signal management.

Application

The SNRVBD660CTT4G is a Schottky diode rectifier primarily used in:
- Power Supplies: Efficient rectification in AC-DC converters.
- Voltage Clamping: Protection circuits against voltage spikes.
- Reverse Polarity Protection: Safeguarding sensitive electronics.
- DC-DC Converters: High-frequency switching applications.
- Automotive Systems: Used in alternators, LED drivers, and battery management.
Its low forward voltage drop and fast switching make it ideal for energy-efficient, high-speed applications.

Produits liés à SNRVBD660CTT4G

  • Devis rapide

  • Envoyez votre demande de devis pour SNRVBD660CTT4G Utilisez ce formulaire. Nous vous répondrons sous 12 heures.