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SISS05DN-T1-GE3
+NomenclatureMOSFET P-CH 30V 29.4A/108A PPAK
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FabricantSiliconix
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Pièce fabricant #SISS05DN-T1-GE3
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En stock12183
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Spécifications
| Attribut | Valeur |
| Series | TrenchFET® Gen IV |
| Part Status | Active |
| Base Product Number | SISS05 |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 29.4A (Ta), 108A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 10 V |
| Vgs (Max) | +16V, -20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4930 pF @ 15 V |
| Power Dissipation (Max) | 5W (Ta), 65.7W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8S |
| Package / Case | PowerPAK® 1212-8S |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
