Images à titre indicatif uniquement
SIS902DN-T1-GE3
+NomenclatureMOSFET 2N-CH 75V 4A PPAK 1212-8
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FabricantSiliconix
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Pièce fabricant #SIS902DN-T1-GE3
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Fiche technique SIS902DN-T1-GE3 DataSheet
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Package PowerPAK® 1212-8 Dual
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En stock9458
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain(Id) @ 25°C | 4A |
| Rds On(Max) @ Id Vgs | 186mOhm @ 3A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 6nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 175pF @ 38V |
| Power - Max | 15.4W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
