SI9435BDY-T1-E3

Images à titre indicatif uniquement

SI9435BDY-T1-E3

+Nomenclature

MOSFET P-CH 30V 4.1A 8SO

  • FabricantSiliconix

  • Pièce fabricant #SI9435BDY-T1-E3

  • Package SOIC-8

  • En stock7057

365 Garantie qualité 24h/24

7*24 Garantie de service 24h/24

90-Garantie après-vente 24h/24

Garantie produit authentique

Spécifications

Attribut Valeur
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 4.1A (Ta)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 42mOhm @ 5.7A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 24 nC @ 10 V
Vgs(Max) ±20V
Power Dissipation (Max) 1.3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC

Présentation

Description

The SI9435BDY-T1-E3 is a P-channel MOSFET from Vishay Siliconix, designed for power management applications. Key features include:
- Voltage Rating: -30V
- Current Rating: -5.7A (continuous)
- Low On-Resistance (RDS(on)): 47mΩ (max) at VGS = -10V
- Gate Threshold Voltage (VGS(th)): -1V to -2.5V
- Compact Package: PowerPAK® SO-8 (optimized for space-constrained designs)
Ideal for load switching, battery protection, and DC-DC conversion in portable electronics, power supplies, and automotive systems. Its low gate charge and fast switching enhance efficiency in high-frequency applications.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the SI9435BDY-T1-E3 (a P-channel MOSFET) include:
- IRLML6402TRPBF (Infineon)
- AO3401 (Alpha & Omega)
- DMG2305UX (Diodes Inc.)
- FDC633P (ON Semiconductor)
These alternatives offer similar specifications (e.g., -30V, -4.3A, low RDS(on)). Verify exact parameters for your application.

Pinout

The SI9435BDY-T1-E3 is a P-channel MOSFET in a PowerPAK® SO-8 package with 8 pins.
Key Functions:
- Drain (D), Source (S), and Gate (G) connections for power switching.
- Low on-resistance (RDS(on)) for efficient power management.
- High current handling (up to -30A drain current).
- Low gate charge for fast switching in applications like DC-DC converters, load switches, and battery protection.
Pinout (Typical SO-8):
- Pins 1, 2, 3 (Drain)
- Pins 5, 6, 7, 8 (Source)
- Pin 4 (Gate)
Used in power supplies, motor control, and portable electronics.

Application

The SI9435BDY-T1-E3 is a P-channel MOSFET commonly used in:
1. Power Management – Load switching, battery protection.
2. Portable Devices – Smartphones, tablets (power control).
3. Automotive Systems – Infotainment, lighting, and ECUs.
4. Consumer Electronics – USB power distribution, DC-DC converters.
5. Industrial Applications – Low-voltage motor control, power supplies.
Its low on-resistance and compact package make it ideal for space-constrained, high-efficiency designs.

Package

The SI9435BDY-T1-E3 is a PowerTrench MOSFET in a SO-8 package. This surface-mount package is compact and widely used for power management applications, offering efficient thermal performance and space-saving design. The "T1" suffix typically indicates tape-and-reel packaging for automated assembly.

Produits liés à SI9435BDY-T1-E3