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SI7960DP-T1-GE3
+NomenclatureMOSFET 2N-CH 60V 6.2A PPAK SO-8
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FabricantSiliconix
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Pièce fabricant #SI7960DP-T1-GE3
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Package PowerPAK® SO-8 Dual
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En stock6595
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain(Id) @ 25°C | 6.2A |
| Rds On(Max) @ Id Vgs | 21mOhm @ 9.7A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 75nC @ 10V |
| Power - Max | 1.4W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
