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SI7463DP-T1-GE3
+NomenclatureMOSFET P-CH 40V 11A PPAK SO-8
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FabricantSiliconix
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Pièce fabricant #SI7463DP-T1-GE3
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Fiche technique SI7463DP-T1-GE3 DataSheet
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En stock4129
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Spécifications
| Attribut | Valeur |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 9.2mOhm @ 18.6A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 1.9W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Base Product Number | SI7463 |
Présentation
Description
The SI7463DP-T1-GE3 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay Intertechnology. It features an N-channel design, which is commonly used in various applications such as power management, switching regulators, and motor control.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of 62A, and a low on-resistance (R_DS(on)) of approximately 8.1 mΩ at a gate-source voltage (V_GS) of 10V, making it efficient for high-performance applications.
The device is housed in a SO-8 package, providing a compact footprint suitable for space-constrained designs. Its low switching losses and high thermal performance make it ideal for applications requiring reliable and efficient power handling.
The SI7463DP-T1-GE3 is also RoHS-compliant, ensuring it meets environmental standards for lead-free electronics. Overall, it’s a versatile choice for engineers looking to optimize power efficiency in their designs.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a continuous drain current (I_D) of 62A, and a low on-resistance (R_DS(on)) of approximately 8.1 mΩ at a gate-source voltage (V_GS) of 10V, making it efficient for high-performance applications.
The device is housed in a SO-8 package, providing a compact footprint suitable for space-constrained designs. Its low switching losses and high thermal performance make it ideal for applications requiring reliable and efficient power handling.
The SI7463DP-T1-GE3 is also RoHS-compliant, ensuring it meets environmental standards for lead-free electronics. Overall, it’s a versatile choice for engineers looking to optimize power efficiency in their designs.
Equivalent
The SI7463DP-T1-GE3 is an N-channel MOSFET. Equivalent products include the BSS138, IRF540, and FQP30N06L. However, always check datasheets for specific requirements such as voltage, current ratings, and package type to ensure compatibility in your application.
Features
The SI7463DP-T1-GE3 is a N-channel MOSFET designed for high-performance switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: The continuous drain current (I_D) can go up to 62A, making it suitable for high power applications.
3. R_DS(on): It offers a low on-resistance of about 5.6 mΩ, which minimizes conduction losses and enhances efficiency.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges from 1V to 2.5V, allowing it to be driven easily by low-voltage logic.
5. Fast Switching Speed: It features rapid switching characteristics, ideal for applications like power management and motor control.
6. Package: Housed in a DPAK package for effective thermal management and PCB mounting.
7. Applications: Suitable for use in power supplies, DC-DC converters, and automotive applications.
These attributes make the SI7463DP-T1-GE3 an excellent choice for designers seeking reliability and efficiency in their circuits.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: The continuous drain current (I_D) can go up to 62A, making it suitable for high power applications.
3. R_DS(on): It offers a low on-resistance of about 5.6 mΩ, which minimizes conduction losses and enhances efficiency.
4. Gate Threshold Voltage (V_GS(th)): The gate threshold voltage ranges from 1V to 2.5V, allowing it to be driven easily by low-voltage logic.
5. Fast Switching Speed: It features rapid switching characteristics, ideal for applications like power management and motor control.
6. Package: Housed in a DPAK package for effective thermal management and PCB mounting.
7. Applications: Suitable for use in power supplies, DC-DC converters, and automotive applications.
These attributes make the SI7463DP-T1-GE3 an excellent choice for designers seeking reliability and efficiency in their circuits.
Pinout
The SI7463DP-T1-GE3 is a N-channel MOSFET with a total of 8 pins. Its key functions include:
1. D (Drain): Pins 2 and 4 are connected to the drain terminal where the load is connected.
2. S (Source): Pins 1 and 3 serve as the source terminal, typically connected to the ground or negative side of the power supply.
3. G (Gate): Pins 5, 6, and 7 act as the gate terminals, which control the MOSFET's switching operation.
4. Tab (Tab/Heat Sink): The exposed pad (tab) on the bottom of the package can be used for heat dissipation.
The SI7463DP-T1-GE3 is designed for low on-resistance, high-speed switching applications, making it suitable for various power management tasks in electronic circuits.
1. D (Drain): Pins 2 and 4 are connected to the drain terminal where the load is connected.
2. S (Source): Pins 1 and 3 serve as the source terminal, typically connected to the ground or negative side of the power supply.
3. G (Gate): Pins 5, 6, and 7 act as the gate terminals, which control the MOSFET's switching operation.
4. Tab (Tab/Heat Sink): The exposed pad (tab) on the bottom of the package can be used for heat dissipation.
The SI7463DP-T1-GE3 is designed for low on-resistance, high-speed switching applications, making it suitable for various power management tasks in electronic circuits.
Manufacturer
The manufacturer of the SI7463DP-T1-GE3 is Vishay Intertechnology, Inc. Vishay is a global leader in the electronic components industry, specializing in discrete semiconductors and passive electronic components. The company designs, manufactures, and supplies a wide range of products, including resistors, capacitors, inductors, diodes, transistors, and MOSFETs, which are used in various applications across multiple sectors such as automotive, industrial, telecommunications, and consumer electronics.
Vishay operates numerous manufacturing facilities worldwide and is known for its commitment to quality and innovation in the electronics space. The SI7463DP-T1-GE3 is specifically a N-channel MOSFET, which is utilized in power management and switching applications. Vishay's extensive product portfolio and technological expertise make it a key player in the electronics market, catering to both high-volume and specialized components for diverse electronic solutions.
Vishay operates numerous manufacturing facilities worldwide and is known for its commitment to quality and innovation in the electronics space. The SI7463DP-T1-GE3 is specifically a N-channel MOSFET, which is utilized in power management and switching applications. Vishay's extensive product portfolio and technological expertise make it a key player in the electronics market, catering to both high-volume and specialized components for diverse electronic solutions.
Application
The SI7463DP-T1-GE3 is a N-channel MOSFET commonly used in various applications, including:
1. Power Management: Efficient voltage regulation and load switching in power supplies.
2. DC-DC Converters: Utilized in buck, boost, and buck-boost converter circuits.
3. Motor Control: Used for driving motors in robotics and automation.
4. LED Drivers: Efficiently managing power in LED lighting systems.
5. Battery Management Systems: Controlling charging and discharging in lithium-ion batteries.
6. Telecommunications: Used in RF amplifiers and signal switching.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications.
1. Power Management: Efficient voltage regulation and load switching in power supplies.
2. DC-DC Converters: Utilized in buck, boost, and buck-boost converter circuits.
3. Motor Control: Used for driving motors in robotics and automation.
4. LED Drivers: Efficiently managing power in LED lighting systems.
5. Battery Management Systems: Controlling charging and discharging in lithium-ion batteries.
6. Telecommunications: Used in RF amplifiers and signal switching.
Its low on-resistance and high-speed switching capabilities make it suitable for these applications.
Package
The SI7463DP-T1-GE3 is packaged in a PowerPAK SO-8 format, which is a surface mount package designed for efficient thermal performance and compact size, facilitating easier handling in automated assembly processes.
