SI7415DN-T1-E3

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SI7415DN-T1-E3

+Nomenclature

MOSFET P-CH 60V 3.6A PPAK1212-8

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Spécifications

Attribut Valeur
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 3.6A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 65mOhm @ 5.7A, 10V
Vgs(th)(Max)@Id 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 25 nC @ 10 V
Vgs(Max) ±20V
PowerDissipation(Max) 1.5W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage PowerPAK® 1212-8

Présentation

Description

The SI7415DN-T1-E3 is a P-channel MOSFET from Vishay Siliconix, designed for power management applications. Key features include:
- Voltage Rating: -30V (drain-to-source)
- Current Rating: -11A (continuous drain current)
- Low On-Resistance (RDS(on)): 18mΩ (max at VGS = -10V)
- Gate Threshold Voltage (VGS(th)): -1V to -2.5V
- Compact Package: PowerPAK® SO-8 (optimized for space efficiency)
Ideal for load switching, DC-DC conversion, and battery protection in portable electronics, power supplies, and automotive systems. Its low RDS(on) ensures minimal power loss, while the fast switching capability enhances efficiency.
For detailed specs, refer to the datasheet from Vishay.

Features

The SI7415DN-T1-E3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -30V (Drain-Source)
- Current Rating: -12A (Continuous Drain Current)
- Low On-Resistance (RDS(on)): 9.5mΩ (max) @ VGS = -10V
- Gate Threshold Voltage (VGS(th)): -1V to -2.5V
- Fast Switching Speed
- AEC-Q101 Qualified (Automotive Grade)
- Package: PowerPAK® SO-8 (Compact, efficient thermal performance)
- Applications: Power management, load switching, automotive systems
This MOSFET is optimized for high efficiency and reliability in demanding environments.

Pinout

The SI7415DN-T1-E3 is a P-channel MOSFET in a PowerPAK SO-8 package with 8 pins.
Key Functions:
- Pins 1, 2, 3 (Source - S): Connected to the source terminal.
- Pin 4 (Gate - G): Controls the MOSFET switching.
- Pins 5, 6, 7, 8 (Drain - D): Combined for high current handling.
Features:
- -30V drain-source voltage (VDS)
- -12A continuous drain current (ID)
- Low on-resistance (RDS(on)) for efficient power switching.
Commonly used in power management, load switching, and DC-DC conversion.

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