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SI7326DN-T1-GE3
+NomenclatureMOSFET N-CH 30V 6.5A PPAK 1212-8
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FabricantSiliconix
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Pièce fabricant #SI7326DN-T1-GE3
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En stock5181
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Spécifications
| Attribut | Valeur |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 19.5mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V |
| Vgs (Max) | ±25V |
| Power Dissipation (Max) | 1.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® 1212-8 |
| Package / Case | PowerPAK® 1212-8 |
| Base Product Number | SI7326 |
Présentation
Description
The SI7326DN-T1-GE3 is a N-channel MOSFET designed for efficient power management in various electronic applications. It features a low on-resistance, enabling reduced conduction losses and improved thermal performance. This device is suitable for high-speed switching applications, including DC-DC converters, power supplies, and motor control systems.
Key specifications include a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 60A, making it capable of handling substantial power loads. The MOSFET's compact package design facilitates easy integration into space-constrained designs.
Additional features include a low gate threshold voltage, allowing for effective drive with low control voltages. The SI7326DN-T1-GE3 is also RoHS compliant, ensuring it meets environmental standards. Overall, this MOSFET is ideal for engineers looking to optimize efficiency and performance in power electronics.
Key specifications include a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 60A, making it capable of handling substantial power loads. The MOSFET's compact package design facilitates easy integration into space-constrained designs.
Additional features include a low gate threshold voltage, allowing for effective drive with low control voltages. The SI7326DN-T1-GE3 is also RoHS compliant, ensuring it meets environmental standards. Overall, this MOSFET is ideal for engineers looking to optimize efficiency and performance in power electronics.
Equivalent
The SI7326DN-T1-GE3 is a N-channel MOSFET. Equivalent products include the IRF3205, BSS138, and STP16NF06, among others. Ensure to verify specifications like voltage, current ratings, and on-resistance to confirm compatibility for your specific application.
Features
The SI7326DN-T1-GE3 is a dual N-channel MOSFET designed for efficient power management applications. Key features include:
1. Low On-Resistance (RDS(on)): It offers low on-state resistance, which minimizes conduction losses and improves thermal performance.
2. High Voltage Rating: The device has a maximum drain-source voltage (VDS) of 30V, making it suitable for various applications.
3. Fast Switching Speed: It enables rapid switching operation, enhancing efficiency in power conversion and switching applications.
4. Compact Package: Packaged in DPAK (TO-252), it allows for efficient thermal dissipation and saves PCB space.
5. Low Gate Charge (QG): The low gate charge facilitates efficient driving with reduced power loss.
6. Robust Protection Features: It can withstand high levels of gate-source voltage (VGS) for added reliability.
These characteristics make the SI7326DN-T1-GE3 ideal for applications like DC-DC converters, motor drivers, and other power management systems.
1. Low On-Resistance (RDS(on)): It offers low on-state resistance, which minimizes conduction losses and improves thermal performance.
2. High Voltage Rating: The device has a maximum drain-source voltage (VDS) of 30V, making it suitable for various applications.
3. Fast Switching Speed: It enables rapid switching operation, enhancing efficiency in power conversion and switching applications.
4. Compact Package: Packaged in DPAK (TO-252), it allows for efficient thermal dissipation and saves PCB space.
5. Low Gate Charge (QG): The low gate charge facilitates efficient driving with reduced power loss.
6. Robust Protection Features: It can withstand high levels of gate-source voltage (VGS) for added reliability.
These characteristics make the SI7326DN-T1-GE3 ideal for applications like DC-DC converters, motor drivers, and other power management systems.
Pinout
The SI7326DN-T1-GE3 is a dual N-channel MOSFET featuring a pin count of 8. It is designed for applications such as power management, load switching, and other high-efficiency switching applications.
Pin Configuration:
1. Gate1 (G1): Controls the first MOSFET.
2. Source1 (S1): Source connection for the first MOSFET.
3. Drain1 (D1): Drain connection for the first MOSFET.
4. Drain2 (D2): Drain connection for the second MOSFET.
5. Source2 (S2): Source connection for the second MOSFET.
6. Gate2 (G2): Controls the second MOSFET.
7. No Connect (NC): Not connected internally.
8. No Connect (NC): Not connected internally.
This component offers low on-resistance and high-speed switching capabilities, making it suitable for efficient power conversion in various electronic applications.
Pin Configuration:
1. Gate1 (G1): Controls the first MOSFET.
2. Source1 (S1): Source connection for the first MOSFET.
3. Drain1 (D1): Drain connection for the first MOSFET.
4. Drain2 (D2): Drain connection for the second MOSFET.
5. Source2 (S2): Source connection for the second MOSFET.
6. Gate2 (G2): Controls the second MOSFET.
7. No Connect (NC): Not connected internally.
8. No Connect (NC): Not connected internally.
This component offers low on-resistance and high-speed switching capabilities, making it suitable for efficient power conversion in various electronic applications.
Manufacturer
The SI7326DN-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. Founded in 1962, the company is known for its extensive product portfolio, which includes resistors, capacitors, inductors, and various types of semiconductor devices, including MOSFETs like the SI7326DN-T1-GE3.
Vishay operates in multiple sectors, serving industries such as automotive, consumer electronics, telecommunications, computing, and industrial applications. The company emphasizes innovation and quality in its products, catering to the growing demand for efficient and reliable electronic components in modern technology applications. Vishay is headquartered in Malvern, Pennsylvania, and has a global presence with manufacturing facilities, sales offices, and distribution networks worldwide.
Vishay operates in multiple sectors, serving industries such as automotive, consumer electronics, telecommunications, computing, and industrial applications. The company emphasizes innovation and quality in its products, catering to the growing demand for efficient and reliable electronic components in modern technology applications. Vishay is headquartered in Malvern, Pennsylvania, and has a global presence with manufacturing facilities, sales offices, and distribution networks worldwide.
Application
The SI7326DN-T1-GE3 is a dual N-channel MOSFET designed for various applications, including:
1. Power Management: Used in DC-DC converters and voltage regulation modules.
2. Load Switching: Ideal for controlling power to motors, LEDs, and other loads.
3. Battery Management Systems: Efficient in charge and discharge control.
4. Power Supply Circuits: Utilized in high-efficiency switching power supplies.
5. Telecommunications: Suitable for signal amplification and switching in RF applications.
Its low on-resistance and fast switching capabilities make it versatile for these applications, enhancing efficiency and performance.
1. Power Management: Used in DC-DC converters and voltage regulation modules.
2. Load Switching: Ideal for controlling power to motors, LEDs, and other loads.
3. Battery Management Systems: Efficient in charge and discharge control.
4. Power Supply Circuits: Utilized in high-efficiency switching power supplies.
5. Telecommunications: Suitable for signal amplification and switching in RF applications.
Its low on-resistance and fast switching capabilities make it versatile for these applications, enhancing efficiency and performance.
Package
The SI7326DN-T1-GE3 is packaged in a SO-8 (Small Outline 8) type package. This surface-mount package is compact and suitable for various applications, providing efficient thermal performance and space-saving advantages.
