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MOSFET P-CH 20V 60A PPAK SO-8
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FabricantSiliconix
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Pièce fabricant #SI7157DP-T1-GE3
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Fiche technique SI7157DP-T1-GE3 DataSheet
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Package PowerPAK-SO-8
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En stock2440
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 60A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 2.5V, 10V |
| Rds On(Max) @ Id Vgs | 1.6mOhm @ 25A, 10V |
| Vgs(th)(Max) @ Id | 1.4V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 625 nC @ 10 V |
| Vgs(Max) | ±12V |
| Input Capacitance(Ciss)(Max) @ Vds | 22000 pF @ 10 V |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
Présentation
Description
- Voltage Rating: -30V (drain-to-source).
- Current Handling: -8.5A (continuous drain current).
- Low On-Resistance (RDS(on)): 28mΩ (max at VGS = -10V), ensuring efficient power switching.
- Compact Package: PowerPAK® SO-8, suitable for space-constrained designs.
- Fast Switching: Optimized for high-efficiency DC-DC converters, load switches, and battery management.
Ideal for automotive, industrial, and consumer electronics, it offers low power loss and high reliability. Always refer to the datasheet for detailed specifications and application guidelines.
Pinout
- Pin Count: 8 pins (standard SO-8 footprint).
- Function:
- Dual N-channel MOSFET (two independent MOSFETs in one package).
- Designed for high-efficiency power switching (e.g., DC-DC converters, motor control).
- Low on-resistance (RDS(on)) for reduced power loss.
- Common features: Logic-level gate drive, fast switching, and thermal protection.
Pins typically include dual source, gate, and drain connections (consult datasheet for exact pinout).