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SI5905BDC-T1-GE3
+NomenclatureMOSFET 2P-CH 8V 4A 1206-8
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FabricantSiliconix
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Pièce fabricant #SI5905BDC-T1-GE3
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Fiche technique SI5905BDC-T1-GE3 DataSheet
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Package 8-SMD, Flat Lead
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En stock2107
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR) |
| Series | TrenchFET® |
| Part Status | Obsolete |
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain(Id) @ 25°C | 4A |
| Rds On(Max) @ Id Vgs | 80mOhm @ 3.3A, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 11nC @ 8V |
| Input Capacitance(Ciss)(Max) @ Vds | 350pF @ 4V |
| Power - Max | 3.1W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
