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SI5511DC-T1-E3
+NomenclatureMOSFET N/P-CH 30V 4A 1206-8
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FabricantSiliconix
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Pièce fabricant #SI5511DC-T1-E3
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Fiche technique SI5511DC-T1-E3 DataSheet
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Package 8-SMD, Flat Lead
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En stock7042
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| ProductStatus | Obsolete |
| FETType | N and P-Channel |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 30V |
| Current-ContinuousDrain(Id)@25°C | 4A, 3.6A |
| RdsOn(Max)@IdVgs | 55mOhm @ 4.8A, 4.5V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 7.1nC @ 5V |
| InputCapacitance(Ciss)(Max)@Vds | 435pF @ 15V |
| Power-Max | 3.1W, 2.6W |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SMD, Flat Lead |
