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SI4532DY
+NomenclaturePOWER FIELD-EFFECT TRANSISTOR, 3
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FabricantFairchild Semiconductor Inc
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Pièce fabricant #SI4532DY
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Fiche technique SI4532DY DataSheet
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Package SOIC-8
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En stock7661
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Part Status | Active |
| FET Type | N and P-Channel |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain(Id) @ 25°C | 3.9A, 3.5A |
| Rds On(Max) @ Id Vgs | 65mOhm @ 3.9A, 10V |
| Vgs(th)(Max) @ Id | 3V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 15nC @ 10V |
| Input Capacitance(Ciss)(Max) @ Vds | 235pF @ 10V |
| Power - Max | 900mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
