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SI4447ADY-T1-GE3
+NomenclatureMOSFET P-CH 40V 7.2A 8SO
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FabricantSiliconix
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Pièce fabricant #SI4447ADY-T1-GE3
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Fiche technique SI4447ADY-T1-GE3 DataSheet
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Package SOIC-8
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En stock4654
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 7.2A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 45mOhm @ 5A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 38 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 970 pF @ 20 V |
| Power Dissipation (Max) | 4.2W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
Présentation
Description
The SI4447ADY-T1-GE3 is a dual P-Channel MOSFET designed for use in various electronic applications, particularly where efficient switching and low power consumption are critical. Manufactured by Vishay Siliconix, it features advanced trench technology that offers low on-resistance and high-speed switching performance. The device operates effectively with low gate charge, making it suitable for high-frequency applications. It is typically utilized in power management circuits, DC-DC converters, and load switch applications.
Key specifications include a drain-source voltage (V_DS) of -30V and a continuous drain current (I_D) of -5.5A at 25°C. The device comes in a compact SO-8 package, which is advantageous for space-constrained designs. Its low R_DS(on) helps in reducing conduction losses, contributing to more efficient designs.
Additionally, the SI4447ADY-T1-GE3 is well-suited for portable and battery-operated devices due to its low threshold voltage and efficient power handling. Its robust design ensures reliable operation over a wide range of temperatures, making it a versatile choice for engineers.
Key specifications include a drain-source voltage (V_DS) of -30V and a continuous drain current (I_D) of -5.5A at 25°C. The device comes in a compact SO-8 package, which is advantageous for space-constrained designs. Its low R_DS(on) helps in reducing conduction losses, contributing to more efficient designs.
Additionally, the SI4447ADY-T1-GE3 is well-suited for portable and battery-operated devices due to its low threshold voltage and efficient power handling. Its robust design ensures reliable operation over a wide range of temperatures, making it a versatile choice for engineers.
Equivalent
The SI4447ADY-T1-GE3 is a MOSFET transistor commonly used for switching applications. Equivalent products can include MOSFETs with similar specifications such as voltage rating, current handling, and package type. Some potential equivalents might be the IRF540N, FQP30N06L, or the NTD4906N. Always verify the specific electrical and thermal characteristics to ensure compatibility with your application requirements.
Features
The SI4447ADY-T1-GE3 is a P-channel MOSFET designed for use in power management applications. Key features include:
1. P-Channel MOSFET: This component is designed to handle negative gate-source voltages, making it suitable for high-side switching applications.
2. Low On-Resistance: It has a low R_DS(on) value, which results in reduced power loss and improved efficiency.
3. Compact Package: Available in a small SO-8 package, allowing for space-saving on PCBs.
4. High Drain Current: Capable of handling significant current levels, supporting robust load requirements.
5. Enhanced ESD Protection: Built-in protection against electrostatic discharge enhances device reliability.
6. RoHS Compliant: Environmentally friendly design, adhering to the Restriction of Hazardous Substances standards.
These features make the SI4447ADY-T1-GE3 suitable for various applications, including load switches, DC-DC converters, and other power management systems.
1. P-Channel MOSFET: This component is designed to handle negative gate-source voltages, making it suitable for high-side switching applications.
2. Low On-Resistance: It has a low R_DS(on) value, which results in reduced power loss and improved efficiency.
3. Compact Package: Available in a small SO-8 package, allowing for space-saving on PCBs.
4. High Drain Current: Capable of handling significant current levels, supporting robust load requirements.
5. Enhanced ESD Protection: Built-in protection against electrostatic discharge enhances device reliability.
6. RoHS Compliant: Environmentally friendly design, adhering to the Restriction of Hazardous Substances standards.
These features make the SI4447ADY-T1-GE3 suitable for various applications, including load switches, DC-DC converters, and other power management systems.
Pinout
The SI4447ADY-T1-GE3 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by Vishay Siliconix. It is housed in an SO-8 package, which typically has 8 pins. The main function of this MOSFET is to serve as a switch or amplifier in electronic circuits. It is commonly used in power management applications due to its low on-resistance and high efficiency.
Here is a brief overview of its pins and functions:
- Pins 1 to 3: Source (S) - These are connected to the source of the MOSFET.
- Pin 4: Gate (G) - This pin is used to control the MOSFET by applying a voltage.
- Pins 5 to 8: Drain (D) - These are connected to the drain of the MOSFET.
The SI4447ADY is designed for low voltage and high-speed switching applications and is often used in automotive, industrial, and consumer electronics for load switching and power management tasks.
Here is a brief overview of its pins and functions:
- Pins 1 to 3: Source (S) - These are connected to the source of the MOSFET.
- Pin 4: Gate (G) - This pin is used to control the MOSFET by applying a voltage.
- Pins 5 to 8: Drain (D) - These are connected to the drain of the MOSFET.
The SI4447ADY is designed for low voltage and high-speed switching applications and is often used in automotive, industrial, and consumer electronics for load switching and power management tasks.
Manufacturer
The SI4447ADY-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components. The company is known for producing a wide range of electronic components that are used in various industries, including automotive, industrial, consumer electronics, telecommunications, and computing. Vishay's offerings include products such as resistors, capacitors, inductors, diodes, transistors, and optoelectronics. Founded in 1962, Vishay has grown through acquisitions and innovations, establishing itself as a major player in the electronics components market.
Application
The SI4447ADY-T1-GE3 is a P-channel MOSFET commonly used in power management applications. Its typical application areas include load switching, power supply for battery-operated devices, DC-DC converters, and power management in portable electronics. It is ideal for applications requiring efficient power control due to its low on-resistance and fast switching capabilities. Additionally, it can be used in automotive systems, industrial equipment, and telecommunications equipment where space is limited, and high-efficiency power control is necessary.
Package
The SI4447ADY-T1-GE3 is a MOSFET transistor typically available in an SO-8 (Small Outline 8-pin) package. This package type is often used for surface-mount applications, providing a compact form factor suitable for high-density PCB designs.
