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SI4403CDY-T1-GE3
+NomenclatureMOSFET P-CH 20V 13.4A 8SO
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FabricantSiliconix
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Pièce fabricant #SI4403CDY-T1-GE3
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En stock4423
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Spécifications
| Attribut | Valeur |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 13.4A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 4.5V |
| Rds On(Max) @ Id Vgs | 15.5mOhm @ 9A, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 90 nC @ 8 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 2380 pF @ 10 V |
| Power Dissipation (Max) | 5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOIC |
Présentation
Description
SI4403CDY-T1-GE3 is a Vishay Siliconix power MOSFET. It is an N-channel enhancement-mode transistor used for high-efficiency switching in low-voltage power electronics (e.g., DC-DC converters, motor drives, load switches).
Key points:
- Package/variant: a surface-mount power MOSFET (exact package and reel/grade are specified by the T1-GE3 suffix).
- Typical role: switches current in switching regulators and other power-management circuits.
- Features: low on-resistance for reduced conduction loss, high-speed switching capability, and robust thermal performance (specifications depend on the exact lot and revision).
- Important: exact electrical specs (Vds, Id, Rds(on), threshold, input capacitance) vary by revision; consult the latest Vishay datasheet and mechanical drawings for SI4403CDY-T1-GE3.
How to use: connect drain to the load, source to the return (for a low-side N-channel), drive the gate with an appropriate gate voltage, and include standard protection (gate resistor, zener or TVS if needed).
Key points:
- Package/variant: a surface-mount power MOSFET (exact package and reel/grade are specified by the T1-GE3 suffix).
- Typical role: switches current in switching regulators and other power-management circuits.
- Features: low on-resistance for reduced conduction loss, high-speed switching capability, and robust thermal performance (specifications depend on the exact lot and revision).
- Important: exact electrical specs (Vds, Id, Rds(on), threshold, input capacitance) vary by revision; consult the latest Vishay datasheet and mechanical drawings for SI4403CDY-T1-GE3.
How to use: connect drain to the load, source to the return (for a low-side N-channel), drive the gate with an appropriate gate voltage, and include standard protection (gate resistor, zener or TVS if needed).
Equivalent
I need one quick detail to give accurate equivalents: which parameters matter most—VDS (drain‑source voltage), RDS(on) at which VGS, package (SOT‑23‑6?), or whether you need a direct drop‑in replacement? Tell me that and I’ll list compatible parts.
Pinout
Pin count: 6 pins (SOT‑23‑6 package).
Function: Dual N‑channel enhancement‑mode MOSFET — two independent N‑FETs in one package (each FET has gate, drain and source). Used for low‑voltage switching, load control and power management. (TI/Vishay ordering suffixes: T1 = tape & reel, GE3 = RoHS.)
Function: Dual N‑channel enhancement‑mode MOSFET — two independent N‑FETs in one package (each FET has gate, drain and source). Used for low‑voltage switching, load control and power management. (TI/Vishay ordering suffixes: T1 = tape & reel, GE3 = RoHS.)
Manufacturer
The manufacturer is Vishay Siliconix, a division of Vishay Intertechnology. Vishay Intertechnology is a global manufacturer of electronic components, including discrete semiconductors (MOSFETs), passive components, sensors, and related devices.
Application
SI4403CDY-T1-GE3 is a dual N-channel power MOSFET. Typical application areas include:
- Switching elements in portable PMICs and DC-DC converters
- Buck/boost regulators and synchronous rectification
- High-side or low-side load switches
- Battery management, protection, and charging circuits
- Motor/actuator drive (low- to mid-power)
- Power gating, reverse-polarity and reverse-current protection
- General-purpose switching in consumer electronics and embedded systems
- Switching elements in portable PMICs and DC-DC converters
- Buck/boost regulators and synchronous rectification
- High-side or low-side load switches
- Battery management, protection, and charging circuits
- Motor/actuator drive (low- to mid-power)
- Power gating, reverse-polarity and reverse-current protection
- General-purpose switching in consumer electronics and embedded systems
Package
It uses an 8-pin SOIC (SOP-8) surface-mount package; GE3 indicates RoHS-compliant lead-free.
