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SI2336DS-T1-GE3
+NomenclatureMOSFET N-CH 30V 5.2A SOT23-3
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FabricantSiliconix
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Pièce fabricant #SI2336DS-T1-GE3
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Fiche technique SI2336DS-T1-GE3 DataSheet
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Package SOT-23-3
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En stock1831
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 5.2A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 4.5V |
| Rds On(Max) @ Id Vgs | 42mOhm @ 3.8A, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 15 nC @ 8 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 560 pF @ 15 V |
| Power Dissipation (Max) | 1.25W (Ta), 1.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
Présentation
Description
- Low on-resistance (RDS(on)): 28 mΩ at 4.5V (VGS) for reduced power loss.
- Small footprint: DFN2020 package (2x2mm), ideal for space-constrained designs.
- Voltage rating: -20V drain-to-source (VDS), suitable for 12V systems.
- Low gate charge (Qg): Enhances switching efficiency.
Common uses include load switching, battery protection, and DC-DC conversion in portable devices, IoT, and automotive electronics. Its T1-GE3 suffix indicates halogen-free, RoHS-compliant packaging.
For detailed specs, refer to the datasheet.
Equivalent
- DMG2305UX (Diodes Inc)
- AO3401A (Alpha & Omega)
- BSS84 (NXP/Infineon)
- TP2104 (UNIKC)
These are similar in specs (P-MOSFET, SOT-23, ~20V, 4-6A). Verify exact parameters for your application.
Features
- Voltage Rating: -30V (Drain-to-Source, VDS)
- Current Rating: -5.8A (Continuous Drain Current, ID)
- Low On-Resistance: 47mΩ (max) @ VGS = -10V
- Gate Threshold Voltage (VGS(th)): -1V to -2.5V
- Fast Switching: Low gate charge (Qg) for efficient performance
- Package: SOT-23 (Compact surface-mount)
- Applications: Power management, load switching, battery protection
Designed for high efficiency in portable and low-voltage systems.
Pinout
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the input voltage (typically tied to the higher potential).
3. Drain (D) – Output connection, switches to ground when the MOSFET is active.
Key Features:
- Voltage Rating: -20V (drain-to-source).
- Current Rating: -4.3A (continuous drain current).
- Low RDS(on): ~28mΩ (max at VGS = -4.5V).
- Logic-Level Gate Drive (suitable for 2.5V/3.3V/5V systems).
Commonly used for power switching, load control, and reverse polarity protection in compact designs.
Manufacturer
Vishay is a well-established company (founded in 1962) known for producing high-performance discrete semiconductors, resistors, capacitors, and sensors. They serve industries like automotive, industrial, computing, and consumer electronics, emphasizing reliability and innovation.
The SI2336DS-T1-GE3 is part of their TrenchFET® Gen III series, optimized for power efficiency in compact applications.
Application
1. Power Management – Voltage regulation, load switching in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection in battery packs.
3. DC-DC Converters – Efficient power conversion in step-down circuits.
4. Consumer Electronics – Power control in smartphones, tablets, and wearables.
5. Automotive Systems – Low-voltage applications like infotainment and lighting.
Its low on-resistance (RDS(on)) and compact package (SOT-23) make it ideal for space-constrained, energy-efficient designs.
