SI2329DS-T1-GE3

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SI2329DS-T1-GE3

+Nomenclature

MOSFET P-CH 8V 6A SOT23-3

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Spécifications

Attribut Valeur
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 8 V
Current - Continuous Drain(Id) @ 25°C 6A (Tc)
Drive Voltage(Max Rds On Min Rds On) 1.2V, 4.5V
Rds On(Max) @ Id Vgs 30mOhm @ 5.3A, 4.5V
Vgs(th)(Max) @ Id 800mV @ 250µA
Gate Charge(Qg)(Max) @ Vgs 29 nC @ 4.5 V
Vgs(Max) ±5V
Input Capacitance(Ciss)(Max) @ Vds 1485 pF @ 4 V
Power Dissipation (Max) 2.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)

Présentation

Description

The SI2329DS-T1-GE3 is a N-channel MOSFET from Vishay Siliconix, designed for high-efficiency power management in applications like DC-DC converters, load switching, and motor control.
### Key Features:
- Voltage Rating: 30V
- Current Rating: 6.7A (continuous)
- Low On-Resistance (RDS(on)): 23mΩ (max at 10V VGS)
- Fast Switching: Optimized for high-frequency operation
- Package: PowerPAK® SO-8 (compact, surface-mount)
### Applications:
- Power supplies (synchronous rectification)
- Battery management
- Portable electronics
### Advantages:
- Low power loss due to minimal RDS(on)
- Thermally efficient design
- RoHS compliant
Ideal for space-constrained, high-performance designs requiring reliable power handling.

Equivalent

Equivalent products to the SI2329DS-T1-GE3 (a 20V P-channel MOSFET) include:
- AO3401A (20V, -4A, SOT-23)
- DMG2305UX (20V, -4.2A, SOT-23)
- IRLML6402 (12V, -3.7A, SOT-23)
- BSS84 (50V, -0.13A, SOT-23) for lower current
Check datasheets for exact specs like Vgs, Rds(on), and current ratings.

Features

The SI2329DS-T1-GE3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -20V (Drain-Source)
- Current Rating: -4.3A (Continuous Drain Current)
- Low On-Resistance: 50mΩ (max) @ VGS = -4.5V
- Gate Threshold Voltage: -1V (typical)
- Fast Switching: Low gate charge (Qg = 8.5nC typical)
- Package: SOT-23 (Compact surface-mount)
- Applications: Power management, load switching, battery protection
Designed for efficiency in portable and low-voltage systems.

Pinout

The SI2329DS-T1-GE3 is a P-channel MOSFET in a SOT-23-3 package with 3 pins.
Pin Functions:
1. Gate (G): Controls the MOSFET's switching.
2. Source (S): Connected to the input voltage (typically higher potential for P-channel).
3. Drain (D): Output connection, switches to the source when the gate is driven low.
Key Features:
- -20V drain-source voltage (VDS)
- -4.3A continuous drain current (ID)
- Low on-resistance (RDS(on) ≈ 36mΩ at VGS = -4.5V).
Commonly used for power switching, load control, and battery management.

Manufacturer

The SI2329DS-T1-GE3 is manufactured by Vishay Intertechnology, a global leader in semiconductors and passive electronic components. Founded in 1962, Vishay specializes in producing discrete diodes, MOSFETs, optoelectronics, resistors, capacitors, and inductors for industries like automotive, industrial, computing, and consumer electronics. Known for innovation and reliability, Vishay serves a broad range of high-performance applications. The SI2329DS-T1-GE3 is a P-channel MOSFET, commonly used in power management circuits.

Application

The SI2329DS-T1-GE3 is a P-channel MOSFET commonly used in:
1. Power Management – Voltage regulation, load switching.
2. Battery Protection – Reverse polarity and overcurrent prevention.
3. DC-DC Converters – Efficient power conversion in portable devices.
4. Motor Control – Driving small motors in consumer electronics.
5. Automotive Systems – Low-voltage applications like infotainment and lighting.
Its low on-resistance (RDS(on)) and compact package (SOT-23) make it ideal for space-constrained, energy-efficient designs.

Package

The SI2329DS-T1-GE3 is a SOT-23-3 package type. This small surface-mount package is commonly used for low-power transistors and MOSFETs, featuring three pins in a compact design suitable for space-constrained applications.

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