SI2323DS-T1-E3

Images à titre indicatif uniquement

SI2323DS-T1-E3

+Nomenclature

MOSFET P-CH 20V 3.7A SOT23-3

  • FabricantSiliconix

  • Pièce fabricant #SI2323DS-T1-E3

  • Package SOT23-3

  • En stock2673

365 Garantie qualité 24h/24

7*24 Garantie de service 24h/24

90-Garantie après-vente 24h/24

Garantie produit authentique

Spécifications

Attribut Valeur
Package Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 3.7A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 1.8V, 4.5V
RdsOn(Max)@IdVgs 39mOhm @ 4.7A, 4.5V
Vgs(th)(Max)@Id 1V @ 250µA
GateCharge(Qg)(Max)@Vgs 19 nC @ 4.5 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 1020 pF @ 10 V
PowerDissipation(Max) 750mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Présentation

Description

The SI2323DS-T1-E3 is a P-channel MOSFET from Vishay Siliconix, designed for low-voltage, high-efficiency power management applications. Key features include:
- Low On-Resistance (RDS(on)): Typically 28mΩ at VGS = -4.5V, reducing conduction losses.
- Low Gate Charge (Qg): Enhances switching efficiency.
- Compact Package: SOT-23 (3-pin), ideal for space-constrained designs.
- Voltage Rating: -20V drain-to-source (VDS), suitable for 12V systems.
- Applications: Power switches, load switches, battery management, and DC-DC converters.
This MOSFET is optimized for portable electronics, power supplies, and automotive systems, offering reliable performance with minimal power dissipation.

Equivalent

Equivalent products to the SI2323DS-T1-E3 (P-channel MOSFET, 20V, 4.3A) include:
- AO3401A (20V, 4.2A)
- DMG2305UX (20V, 4.2A)
- IRLML6402 (12V, 3.7A)
- FDN340P (20V, 2.3A)
Check datasheets for exact specs and pin compatibility.

Features

The SI2323DS-T1-E3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -20V (Drain-to-Source, VDS)
- Current Rating: -4.3A (Continuous Drain Current, ID)
- Low On-Resistance: 50mΩ (max) at VGS = -4.5V
- Gate Threshold Voltage (VGS(th)): -0.7V (typical)
- Fast Switching: Low gate charge (Qg) for efficient performance
- Package: SOT-23 (Compact surface-mount)
- Applications: Power management, load switching, battery protection
Designed for efficiency in portable and low-voltage systems.

Pinout

The SI2323DS-T1-E3 is a P-channel MOSFET in a SOT-23 package with 3 pins.
Pin Functions:
1. Gate (G) – Controls the MOSFET's switching.
2. Source (S) – Connected to the input voltage (P-channel).
3. Drain (D) – Output connection to the load.
Key Features:
- -20V drain-source voltage (VDS)
- -4.3A continuous drain current (ID)
- Low RDS(on) for efficient power switching.
Commonly used in power management, load switching, and battery protection circuits.

Application

The SI2323DS-T1-E3 is a P-channel MOSFET commonly used in:
1. Power Management – Voltage regulation, load switching in portable devices.
2. Battery Protection – Reverse polarity and overcurrent protection.
3. DC-DC Converters – Efficient power conversion in compact designs.
4. Consumer Electronics – Smartphones, tablets, and wearables for power control.
5. Automotive Systems – Low-voltage applications like infotainment and lighting.
Its low on-resistance and small package (SOT-23) make it ideal for space-constrained, energy-efficient designs.

Package

The SI2323DS-T1-E3 is a P-channel MOSFET in a SOT-23-3 package. This small surface-mount package is compact, suitable for space-constrained applications, and has three pins. It is commonly used in power management, switching circuits, and load control. The SOT-23-3 package offers good thermal performance and ease of PCB assembly.

Produits liés à SI2323DS-T1-E3

  • Devis rapide

  • Envoyez votre demande de devis pour SI2323DS-T1-E3 Utilisez ce formulaire. Nous vous répondrons sous 12 heures.