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SI2323CDS-T1-GE3
+NomenclatureMOSFET P-CH 20V 6A SOT23-3
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FabricantSiliconix
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Pièce fabricant #SI2323CDS-T1-GE3
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En stock9955
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Spécifications
| Attribut | Valeur |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 4.6A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1090 pF @ 10 V |
| Power Dissipation (Max) | 1.25W (Ta), 2.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | SI2323 |
Présentation
Description
The SI2323CDS-T1-GE3 is a N-channel MOSFET transistor designed for efficient power management applications. It features a low on-resistance of approximately 0.015 ohms at a gate voltage of 10V, allowing for reduced power loss and improved thermal performance. This MOSFET is suitable for high-speed switching applications, including DC-DC converters, motor control, and load switching.
With a voltage rating of 30V and a continuous drain current of 25A, the SI2323CDS-T1-GE3 is versatile for various electronic devices. Its compact package (DPAK) enables easy integration into circuit designs, making it ideal for space-constrained applications. The device is also RoHS compliant, ensuring it meets environmental directives.
Overall, the SI2323CDS-T1-GE3 is a reliable choice for engineers seeking efficient, high-performance solutions in power electronics.
With a voltage rating of 30V and a continuous drain current of 25A, the SI2323CDS-T1-GE3 is versatile for various electronic devices. Its compact package (DPAK) enables easy integration into circuit designs, making it ideal for space-constrained applications. The device is also RoHS compliant, ensuring it meets environmental directives.
Overall, the SI2323CDS-T1-GE3 is a reliable choice for engineers seeking efficient, high-performance solutions in power electronics.
Equivalent
The SI2323CDS-T1-GE3 is a dual N-channel MOSFET. Equivalent products include the BSS138, IRF3708, and AO3400. It's important to check specific parameters like voltage, current ratings, and package type to ensure compatibility in your application. Always review datasheets for detailed specifications before substituting components.
Features
The SI2323CDS-T1-GE3 is a N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, allowing it to handle moderate voltage applications.
2. Current Handling: Capable of handling a continuous drain current (I_D) of up to 15A, making it suitable for various power applications.
3. On-Resistance: It boasts a low on-resistance (R_DS(on)) of approximately 10.5 mΩ at V_GS = 10V, minimizing power loss during operation.
4. Gate Threshold Voltage: Features a low gate threshold voltage (V_GS(th)) ranging from 1V to 3V, enabling reliable operation in low-voltage applications.
5. Package Type: Comes in a DFN (Dual Flat No-lead) package, which offers a compact footprint and excellent thermal performance.
6. Fast Switching Speed: Designed for fast switching, making it suitable for applications such as DC-DC converters, motor drivers, and power management circuits.
These characteristics make the SI2323CDS-T1-GE3 an ideal choice for various electronic designs.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, allowing it to handle moderate voltage applications.
2. Current Handling: Capable of handling a continuous drain current (I_D) of up to 15A, making it suitable for various power applications.
3. On-Resistance: It boasts a low on-resistance (R_DS(on)) of approximately 10.5 mΩ at V_GS = 10V, minimizing power loss during operation.
4. Gate Threshold Voltage: Features a low gate threshold voltage (V_GS(th)) ranging from 1V to 3V, enabling reliable operation in low-voltage applications.
5. Package Type: Comes in a DFN (Dual Flat No-lead) package, which offers a compact footprint and excellent thermal performance.
6. Fast Switching Speed: Designed for fast switching, making it suitable for applications such as DC-DC converters, motor drivers, and power management circuits.
These characteristics make the SI2323CDS-T1-GE3 an ideal choice for various electronic designs.
Pinout
The SI2323CDS-T1-GE3 is a dual N-channel MOSFET with a total of 8 pins. Its primary function is to act as a power switch in various applications, including power management and load switching. The specific pin configuration is as follows:
1. Gate 1 (G1) - Controls the first MOSFET.
2. Source 1 (S1) - Source terminal for the first MOSFET.
3. Drain 1 (D1) - Drain terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the second MOSFET.
5. Source 2 (S2) - Source terminal for the second MOSFET.
6. Drain 2 (D2) - Drain terminal for the second MOSFET.
7. Drain 1 (D1) - Common drain for the first device.
8. Source 2 (S2) - Common source for the second device.
The device is known for its low on-resistance and fast switching capabilities, making it suitable for efficient power applications.
1. Gate 1 (G1) - Controls the first MOSFET.
2. Source 1 (S1) - Source terminal for the first MOSFET.
3. Drain 1 (D1) - Drain terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the second MOSFET.
5. Source 2 (S2) - Source terminal for the second MOSFET.
6. Drain 2 (D2) - Drain terminal for the second MOSFET.
7. Drain 1 (D1) - Common drain for the first device.
8. Source 2 (S2) - Common source for the second device.
The device is known for its low on-resistance and fast switching capabilities, making it suitable for efficient power applications.
Manufacturer
The manufacturer of the SI2323CDS-T1-GE3 is Vishay Intertechnology, Inc. Vishay is a global manufacturer of discrete semiconductors and passive electronic components, specializing in a wide range of products, including resistors, capacitors, inductors, and diodes, as well as integrated circuits and MOSFETs. The company serves various industries, including automotive, industrial, telecommunications, consumer electronics, and military/aerospace. Vishay is known for its innovative technologies and commitment to providing high-quality electronic components that meet the evolving demands of modern applications.
Application
The SI2323CDS-T1-GE3 is a N-channel MOSFET designed for various applications, including power management, switching power supplies, DC-DC converters, and motor control. It is suitable for use in portable devices, consumer electronics, and automotive applications due to its low on-resistance and efficient performance. The device is also used in load switching and power routing in power distribution circuits. Its compact size and thermal performance make it ideal for high-density applications where space and heat dissipation are critical.
Package
The SI2323CDS-T1-GE3 is packaged in a small, surface-mount DPAK (TO-252) package. This type of packaging is designed for efficient thermal performance and space-saving in circuit board layouts.
