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SI2315BDS-T1-E3
+NomenclatureMOSFET P-CH 12V 3A SOT23-3
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FabricantSiliconix
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Pièce fabricant #SI2315BDS-T1-E3
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En stock2913
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Spécifications
| Attribut | Valeur |
| Supplier | Vishay Siliconix |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12 V |
| Current - Continuous Drain(Id) @ 25°C | 3A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 4.5V |
| Rds On(Max) @ Id Vgs | 50mOhm @ 3.85A, 4.5V |
| Vgs(th)(Max) @ Id | 900mV @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 15 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 715 pF @ 6 V |
| Power Dissipation (Max) | 750mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
Présentation
Description
SI2315BDS-T1-E3 is a small N-channel MOSFET (enhancement mode) used for power switching in compact circuits. Key points:
- Package: SOT-23 (T1), RoHS-compliant (E3)
- Voltage rating: Vds around 30 V
- Current: can handle a few amperes of continuous drain current
- On-resistance: typically tens of milliohms (roughly ~0.04–0.07 Ω at Vgs ≈ 4.5 V)
- Gate threshold: ~1.0–2.5 V (logic-level drive suitable at 2.5–4.5 V)
- Applications: load switching, PWM DC-DC converters, small motor/gadget power-switching
- Drive: logic-level gate; ensure gate-source voltage within limits to achieve low Rds(on)
- Manufacturer: Vishay Siliconix family; part of the SI2315 series
For exact electrical characteristics (Rds(on), Id max, thermal limits, pinout), consult the official datasheet.
- Package: SOT-23 (T1), RoHS-compliant (E3)
- Voltage rating: Vds around 30 V
- Current: can handle a few amperes of continuous drain current
- On-resistance: typically tens of milliohms (roughly ~0.04–0.07 Ω at Vgs ≈ 4.5 V)
- Gate threshold: ~1.0–2.5 V (logic-level drive suitable at 2.5–4.5 V)
- Applications: load switching, PWM DC-DC converters, small motor/gadget power-switching
- Drive: logic-level gate; ensure gate-source voltage within limits to achieve low Rds(on)
- Manufacturer: Vishay Siliconix family; part of the SI2315 series
For exact electrical characteristics (Rds(on), Id max, thermal limits, pinout), consult the official datasheet.
Equivalent
Exact equivalents require package and electrical specs (Vds, Id, Rds(on)). In general, look for 30 V N-channel MOSFETs in the same package. Possible cross-refs include:
- Vishay: Si2315BD/Si2315DS family
- Infineon: BSC320N08NS3
- Renesas: RJK2310DPB
- On Semiconductor: NTR2P02T1G
Please provide the package and key ratings for precise substitutes.
- Vishay: Si2315BD/Si2315DS family
- Infineon: BSC320N08NS3
- Renesas: RJK2310DPB
- On Semiconductor: NTR2P02T1G
Please provide the package and key ratings for precise substitutes.
Features
SI2315BDS-T1-E3 is a compact N-channel MOSFET. Key features:
- N-channel enhancement-mode MOSFET
- Voltage rating: 30 V
- Low on-resistance for high efficiency
- Logic-level gate drive for easy switching
- High drain current capability for power switching
- Fast switching characteristics (low gate charge)
- 3-pin SOT-23 package (Drain-Gate-Source)
- Tape & Reel packaging (T1) with E3 lead-free/RoHS-compliant packaging
- Suitable for load switches, DC-DC converters, PWM power stages, and general switching applications
Note: For exact electrical specs (RDS(on), ID, VGS(th), capacitances) and safe operating area, refer to the official datasheet.
- N-channel enhancement-mode MOSFET
- Voltage rating: 30 V
- Low on-resistance for high efficiency
- Logic-level gate drive for easy switching
- High drain current capability for power switching
- Fast switching characteristics (low gate charge)
- 3-pin SOT-23 package (Drain-Gate-Source)
- Tape & Reel packaging (T1) with E3 lead-free/RoHS-compliant packaging
- Suitable for load switches, DC-DC converters, PWM power stages, and general switching applications
Note: For exact electrical specs (RDS(on), ID, VGS(th), capacitances) and safe operating area, refer to the official datasheet.
Pinout
SI2315BDS‑T1‑E3 is a 3‑pin SOT‑23 N‑channel MOSFET. Pin functions:
- Pin 1: Gate (G)
- Pin 2: Drain (D) — often tied to the exposed pad/tab/internal drain
- Pin 3: Source (S)
(For exact pin numbering and package mechanical details, refer to the manufacturer’s datasheet.)
- Pin 1: Gate (G)
- Pin 2: Drain (D) — often tied to the exposed pad/tab/internal drain
- Pin 3: Source (S)
(For exact pin numbering and package mechanical details, refer to the manufacturer’s datasheet.)
Manufacturer
- Manufacturer: Vishay Intertechnology, Inc. (Vishay Siliconix)
- What kind of company: A global electronics components company that designs, manufactures, and sells semiconductor devices (e.g., MOSFETs, diodes) and passive components; a multinational corporation headquartered in the United States.
- What kind of company: A global electronics components company that designs, manufactures, and sells semiconductor devices (e.g., MOSFETs, diodes) and passive components; a multinational corporation headquartered in the United States.
Application
SI2315BDS-T1-E3 is a small N-channel MOSFET suitable for switching in compact power-management designs. Common applications:
- DC-DC converter switches (buck/boost)
- Load switches and power-path control in mobile/portable electronics
- Motor/actuator drivers (low to mid current)
- LED driver and backlight power rails
- General-purpose high-side/low-side switches in consumer devices
Note: check the datasheet for exact Vds/Id ratings and drive requirements for your design.
- DC-DC converter switches (buck/boost)
- Load switches and power-path control in mobile/portable electronics
- Motor/actuator drivers (low to mid current)
- LED driver and backlight power rails
- General-purpose high-side/low-side switches in consumer devices
Note: check the datasheet for exact Vds/Id ratings and drive requirements for your design.
Package
DSON-6 package (6-pin D‑SON) from Vishay.
