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SI2312CDS-T1-GE3
+NomenclatureMOSFET N-CH 20V 6A SOT23-3
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FabricantSiliconix
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Pièce fabricant #SI2312CDS-T1-GE3
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Fiche technique SI2312CDS-T1-GE3 DataSheet
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Package SOT-23
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En stock4190
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | TrenchFET® |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain(Id) @ 25°C | 6A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 1.8V, 4.5V |
| Rds On(Max) @ Id Vgs | 31.8mOhm @ 5A, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 18 nC @ 5 V |
| Vgs(Max) | ±8V |
| Input Capacitance(Ciss)(Max) @ Vds | 865 pF @ 10 V |
| Power Dissipation (Max) | 1.25W (Ta), 2.1W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
Présentation
Description
The "Introduction to SI2312CDS-T1-GE3" appears to be a course or module code, likely from a university or educational institution, focusing on a specialized topic. While the exact content of this course isn't clear from the code alone, it may involve elements such as Systems Integration (SI), a specific numerical identifier (2312), and possibly an advanced or technical subject matter (CDS-T1-GE3).
To understand this course, one would typically expect it to provide foundational knowledge, covering essential theories, principles, and methodologies related to the subject. This introduction would prepare students for more advanced topics and applications, equipping them with the skills needed to progress in their studies or careers. Students might engage in lectures, discussions, and practical exercises to deepen their understanding.
For a precise understanding, it's advisable to consult the course syllabus or description provided by the offering institution, which would detail specific learning objectives, topics covered, and any prerequisites required.
To understand this course, one would typically expect it to provide foundational knowledge, covering essential theories, principles, and methodologies related to the subject. This introduction would prepare students for more advanced topics and applications, equipping them with the skills needed to progress in their studies or careers. Students might engage in lectures, discussions, and practical exercises to deepen their understanding.
For a precise understanding, it's advisable to consult the course syllabus or description provided by the offering institution, which would detail specific learning objectives, topics covered, and any prerequisites required.
Equivalent
The SI2312CDS-T1-GE3 is a MOSFET chip designed for various applications. Equivalent products include:
1. IRLML2502 - by Infineon Technologies, offering similar voltage and current ratings.
2. 2N7002 - by ON Semiconductor, a general-purpose MOSFET.
3. BS170 - by NXP Semiconductors, with comparable specifications.
Check datasheets to ensure compatibility as parameters may vary slightly between manufacturers.
1. IRLML2502 - by Infineon Technologies, offering similar voltage and current ratings.
2. 2N7002 - by ON Semiconductor, a general-purpose MOSFET.
3. BS170 - by NXP Semiconductors, with comparable specifications.
Check datasheets to ensure compatibility as parameters may vary slightly between manufacturers.
Features
The SI2312CDS-T1-GE3 is a MOSFET transistor designed for various electronic applications. Key features include:
1. Type: N-Channel MOSFET.
2. Voltage Rating: It typically supports a drain-source voltage (V_DS) of around 20V.
3. Current Rating: The device can handle a continuous drain current (I_D) of approximately 3.2A.
4. Low On-Resistance: It features a low R_DS(on), which minimizes power loss and enhances efficiency, crucial for power-sensitive applications.
5. Package: Commonly available in a compact SOT-23 package, making it suitable for space-constrained designs.
6. Thermal Performance: Designed to operate efficiently under varying thermal conditions, helping in maintaining performance stability.
7. Switching Speed: Offers fast switching capabilities, which is beneficial for high-frequency applications.
8. Applications: Ideal for use in switching applications, load switching, and DC-DC converters.
These characteristics make the SI2312CDS-T1-GE3 a versatile component in designing efficient and compact electronic systems.
1. Type: N-Channel MOSFET.
2. Voltage Rating: It typically supports a drain-source voltage (V_DS) of around 20V.
3. Current Rating: The device can handle a continuous drain current (I_D) of approximately 3.2A.
4. Low On-Resistance: It features a low R_DS(on), which minimizes power loss and enhances efficiency, crucial for power-sensitive applications.
5. Package: Commonly available in a compact SOT-23 package, making it suitable for space-constrained designs.
6. Thermal Performance: Designed to operate efficiently under varying thermal conditions, helping in maintaining performance stability.
7. Switching Speed: Offers fast switching capabilities, which is beneficial for high-frequency applications.
8. Applications: Ideal for use in switching applications, load switching, and DC-DC converters.
These characteristics make the SI2312CDS-T1-GE3 a versatile component in designing efficient and compact electronic systems.
Pinout
The SI2312CDS-T1-GE3 is a MOSFET transistor manufactured by Vishay Siliconix. It is typically used in power management applications due to its efficiency and low on-resistance. Here's a concise overview:
- Pin Count: The SI2312CDS-T1-GE3 comes in a SOT-23 package, which typically has 3 pins.
- Functions of the Pins:
1. Gate (G): This pin controls the on/off state of the MOSFET. A voltage applied here will determine if the conducting channel is open or closed.
2. Drain (D): This pin is connected to the load, and when the MOSFET is on, current flows from the drain to the source.
3. Source (S): This pin is connected to the ground or the negative side of the load. When the MOSFET is on, current flows into this pin from the drain.
The SI2312CDS-T1-GE3 is appreciated for its compact size and effectiveness in switching applications, making it suitable for use in various electronic circuits.
- Pin Count: The SI2312CDS-T1-GE3 comes in a SOT-23 package, which typically has 3 pins.
- Functions of the Pins:
1. Gate (G): This pin controls the on/off state of the MOSFET. A voltage applied here will determine if the conducting channel is open or closed.
2. Drain (D): This pin is connected to the load, and when the MOSFET is on, current flows from the drain to the source.
3. Source (S): This pin is connected to the ground or the negative side of the load. When the MOSFET is on, current flows into this pin from the drain.
The SI2312CDS-T1-GE3 is appreciated for its compact size and effectiveness in switching applications, making it suitable for use in various electronic circuits.
Manufacturer
The SI2312CDS-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay is a global company known for its production of discrete semiconductors and passive electronic components. Founded in 1962 by Dr. Felix Zandman, Vishay has grown to be one of the largest manufacturers in its field. The company's product portfolio includes a wide range of components such as resistors, capacitors, inductors, diodes, and transistors, as well as power MOSFETs and optoelectronics. Vishay's products are used in various applications and industries, including automotive, industrial, computing, consumer, telecommunications, military, aerospace, and medical markets. Vishay is recognized for its innovation in technology and its extensive R&D efforts aimed at developing new products and improving existing ones to meet the evolving needs of its customers.
Application
The SI2312CDS-T1-GE3 is a N-channel MOSFET transistor commonly used in various electronic applications. Its primary areas of application include power management systems, DC-DC converters, and load switch circuits. It is also utilized in low-voltage applications due to its efficient switching capabilities and low on-resistance. Additionally, the SI2312CDS-T1-GE3 is suitable for use in battery-powered devices, portable electronics, and LED drivers where power efficiency and compact size are critical. Its robust performance makes it a preferred choice for designers seeking reliable components for high-speed switching and precise control.
Package
The SI2312CDS-T1-GE3 is a MOSFET transistor packaged in a small, surface-mount package called SOT-23. This package type is commonly used in electronics for its compact size and suitability for automated assembly on printed circuit boards.
