SI2303CDS-T1-GE3

Images à titre indicatif uniquement

SI2303CDS-T1-GE3

+Nomenclature

MOSFET P-CH 30V 2.7A SOT23-3

365 Garantie qualité 24h/24

7*24 Garantie de service 24h/24

90-Garantie après-vente 24h/24

Garantie produit authentique

Spécifications

Attribut Valeur
Package / Case Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET®
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 2.7A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 190mOhm @ 1.9A, 10V
Vgs(th)(Max) @ Id 3V @ 250µA
Gate Charge(Qg)(Max) @ Vgs 8 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 155 pF @ 15 V
Power Dissipation (Max) 1W (Ta), 2.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)

Présentation

Description

The SI2303CDS-T1-GE3 is a P-channel MOSFET from Vishay Siliconix, designed for low-voltage, high-efficiency applications. Key features include:
- Voltage Rating: -30V (Drain-Source)
- Current Rating: -5.7A (Continuous Drain)
- Low On-Resistance: 36mΩ (max at VGS = -10V)
- Gate Threshold: -1V (typical), enabling compatibility with 3.3V/5V logic.
- Compact Package: SOT-23 (3-pin), ideal for space-constrained designs.
Common uses include power management, load switching, and DC-DC conversion in portable devices, battery protection circuits, and power supplies. Its low RDS(on) and fast switching make it energy-efficient for modern electronics.
For detailed specs, refer to the datasheet.

Equivalent

Equivalent products to the SI2303CDS-T1-GE3 (P-channel MOSFET, 20V, 3.7A) include:
- AO3401A (20V, 4A)
- DMG2305UX (20V, 4.2A)
- IRLML6402 (12V, 3.7A)
- BSS84 (50V, 0.13A, lower current)
Check datasheets for exact specs like Vgs, Rds(on), and package compatibility.

Features

The SI2303CDS-T1-GE3 is a P-channel MOSFET with the following key features:
- Voltage Rating: -30V (Drain-to-Source, VDS)
- Current Rating: -4.3A (Continuous Drain Current, ID)
- Low On-Resistance: 60mΩ (max) at VGS = -10V
- Gate Threshold Voltage (VGS(th)): -1V to -2.5V
- Fast Switching: Low gate charge (Qg) for efficient performance
- Package: SOT-23 (Compact surface-mount)
- Applications: Power management, load switching, battery protection
Designed for high efficiency in portable and low-voltage systems.

Application

The SI2303CDS-T1-GE3 is a P-channel MOSFET commonly used in:
1. Power Management – Voltage regulation, load switching, and DC-DC converters.
2. Battery Protection – Reverse polarity and overcurrent protection in portable devices.
3. Motor Control – Small motor drivers in consumer electronics.
4. LED Drivers – Efficient power control for lighting systems.
5. Consumer Electronics – Power switching in smartphones, tablets, and wearables.
Its low on-resistance (RDS(on)) and compact SOT-23 package make it ideal for space-constrained, energy-efficient applications.

Package

The SI2303CDS-T1-GE3 is a MOSFET in a SOT-23-3 package. This small surface-mount package is compact, with three pins, and is commonly used for low-power applications. It measures approximately 2.9mm x 1.3mm x 1.1mm, making it suitable for space-constrained designs.

Produits liés à SI2303CDS-T1-GE3

  • Devis rapide

  • Envoyez votre demande de devis pour SI2303CDS-T1-GE3 Utilisez ce formulaire. Nous vous répondrons sous 12 heures.