Images à titre indicatif uniquement
SE10FJHM3/H
+NomenclatureDIODE GEN PURP 600V 1A DO219AB
-
FabricantVishay Universal Semiconductor - Division diodes
-
Pièce fabricant #SE10FJHM3/H
-
Fiche technique SE10FJHM3/H DataSheet
-
Package DO-219AB
-
En stock7790
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | Vishay General Semiconductor - Diodes Division |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified(Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1.05 V @ 1 A |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 780 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
| Capacitance @ Vr F | 7.5pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Supplier Device Package | DO-219AB (SMF) |
