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SCT2750NYTB
+NomenclatureSICFET N-CH 1700V 5.9A TO268
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FabricantROM
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Pièce fabricant #SCT2750NYTB
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En stock6960
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Spécifications
| Attribut | Valeur |
| Supplier | Rohm Semiconductor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Current - Continuous Drain(Id) @ 25°C | 5.9A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 18V |
| Rds On(Max) @ Id Vgs | 975mOhm @ 1.7A, 18V |
| Vgs(th)(Max) @ Id | 4V @ 630µA |
| Gate Charge(Qg)(Max) @ Vgs | 17 nC @ 18 V |
| Vgs(Max) | +22V, -6V |
| Input Capacitance(Ciss)(Max) @ Vds | 275 pF @ 800 V |
| Power Dissipation (Max) | 57W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-268 |
