Images à titre indicatif uniquement
SBCP68T1G
+NomenclatureTRANS NPN 20V 1A SOT223
-
FabricantSemi - conducteurs
-
Pièce fabricant #SBCP68T1G
-
Fiche technique SBCP68T1G DataSheet
-
Package TO-261-4
-
En stock28435
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Obsolete |
| Transistor Type | NPN |
| Current - Collector(Ic)(Max) | 1 A |
| Voltage - Collector Emitter Breakdown(Max) | 20 V |
| Vce Saturation(Max) @ Ib Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff(Max) | 10µA (ICBO) |
| DC Current Gain(h FE)(Min) @ Ic Vce | 85 @ 500mA, 1V |
| Power - Max | 1.5 W |
| Frequency - Transition | 60MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
Présentation
Description
This transistor is housed in a small SOT-23 surface-mount package, which is ideal for compact circuit board designs where space is limited. Its small size and robust performance make it popular in consumer electronics, automotive, and industrial applications. When designing circuits with the SBCP68T1G, it's important to consider the thermal management and operating conditions to ensure reliability and optimal performance. Overall, the SBCP68T1G is a versatile component that offers a balance between performance and size for a wide range of low-power transistor applications.
Equivalent
1. BAT54 series (e.g., BAT54, BAT54A, BAT54C) from various manufacturers like Diodes Incorporated and ON Semiconductor.
2. RB751 series (e.g., RB751S30) from ROHM Semiconductor.
3. BAS70 series (e.g., BAS70, BAS70-04) from NXP and Infineon Technologies.
These equivalents are typically used for similar low-voltage, high-speed switching applications. Always check datasheets to ensure compatibility with specific requirements.
Features
1. Type: PNP Transistor.
2. Package: SOT-23, suitable for surface-mount technology.
3. Collector-Emitter Voltage (Vceo): Generally supports up to 50V, allowing for moderate voltage applications.
4. Collector Current (Ic): Typically supports up to 100mA, making it suitable for low to moderate current applications.
5. Power Dissipation (Pd): Usually around 200mW, allowing it to handle small power loads.
6. High Gain: Offers decent current gain (hFE), ensuring efficient amplification.
7. Temperature Range: Operates effectively within a broad temperature range, often from -55°C to +150°C, ensuring reliability in various environments.
8. Applications: Ideal for general-purpose amplification, switching applications, and signal processing tasks in consumer electronics.
This transistor is suitable for situations where space conservation is crucial and where moderate power handling and amplification are required.
Pinout
1. Anode (A)
2. Cathode (K)
The primary function of the SBCP68T1G is to allow current to pass in one direction, from anode to cathode, while blocking current in the reverse direction, thereby acting as a rectifier. Schottky diodes like the SBCP68T1G are known for their low forward voltage drop and fast switching speed, making them suitable for high-frequency and low-voltage applications.
Manufacturer
Application
1. Power management: Ideal for voltage clamping and protection circuits.
2. Rectification: Used in AC to DC conversion in power supplies.
3. RF applications: Suitable for signal detection and mixing due to its low capacitance.
4. DC-DC converters: Enhances efficiency in power conversion systems.
5. Solar panel systems: Assists in preventing reverse current flow.
6. Automotive: Used in various electronic control units for efficient power management.
These applications leverage the diode's efficiency and reliability in handling low voltage and high-frequency operations.