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SBC846BWT1G
+NomenclatureTRANS NPN 65V 0.1A SC70-3
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FabricantSemi - conducteurs
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Pièce fabricant #SBC846BWT1G
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Package SOT-323
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En stock4193
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Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| TransistorType | NPN |
| Current-Collector(Ic)(Max) | 100 mA |
| Voltage-CollectorEmitterBreakdown(Max) | 65 V |
| VceSaturation(Max)@IbIc | 600mV @ 5mA, 100mA |
| Current-CollectorCutoff(Max) | 15nA (ICBO) |
| DCCurrentGain(hFE)(Min)@IcVce | 200 @ 2mA, 5V |
| Power-Max | 150 mW |
| Frequency-Transition | 100MHz |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | SC-70, SOT-323 |
Présentation
Description
The SBC846BWT1G is a high-frequency NPN bipolar junction transistor (BJT) produced by ON Semiconductor. It is designed for use in general-purpose switching and amplification applications. This transistor is encapsulated in a small Surface-Mounted Device (SMD) package known as SOT-323, making it suitable for compact circuit designs.
Key characteristics of the SBC846BWT1G include a collector-emitter voltage (Vceo) of 65V, a collector current (Ic) of up to 100mA, and a power dissipation of 250mW. It offers a transition frequency of around 100MHz, which ensures good performance in high-frequency applications.
The transistor is commonly used in electronic circuits for signal processing, especially in RF amplification and switching applications due to its fast switching speed and high frequency. It is also popular in portable and battery-operated devices where space is limited. The SBC846BWT1G is part of a family of transistors with similar features but different configurations to suit a wide range of electronic design requirements.
Key characteristics of the SBC846BWT1G include a collector-emitter voltage (Vceo) of 65V, a collector current (Ic) of up to 100mA, and a power dissipation of 250mW. It offers a transition frequency of around 100MHz, which ensures good performance in high-frequency applications.
The transistor is commonly used in electronic circuits for signal processing, especially in RF amplification and switching applications due to its fast switching speed and high frequency. It is also popular in portable and battery-operated devices where space is limited. The SBC846BWT1G is part of a family of transistors with similar features but different configurations to suit a wide range of electronic design requirements.
Equivalent
The SBC846BWT1G is a general-purpose NPN bipolar junction transistor. Equivalent products include the BC846Band 2N3904 transistors, which share similar specifications for general applications. When selecting an equivalent, ensure that parameters like collector current, voltage ratings, and packaging (such as SOT-323 for surface mount) match your requirements. Always check the datasheets to confirm compatibility with your specific application.
Features
The SBC846BWT1G is an NPN general-purpose transistor designed for a variety of applications, offering reliable performance. Key features include:
1. Polarity: NPN
2. Collector-Emitter Voltage (Vceo): 65V
3. Collector-Base Voltage (Vcbo): 80V
4. Emitter-Base Voltage (Vebo): 6V
5. Collector Current (Ic): 100mA
6. Power Dissipation: 150mW
7. DC Current Gain (hFE): Typically ranges from 100 to 300
8. Transition Frequency (fT): 100 MHz
9. Package: SOT-323, a small surface-mount package
10. Operating Temperature Range: -55°C to +150°C
The SBC846BWT1G is suitable for amplifying and switching applications, providing efficient operation in low-power circuits. Its compact SOT-323 package allows for space-saving designs in densely packed electronic circuits. This transistor is commonly used in consumer electronics, communication devices, and other applications requiring moderate current and voltage handling capabilities.
1. Polarity: NPN
2. Collector-Emitter Voltage (Vceo): 65V
3. Collector-Base Voltage (Vcbo): 80V
4. Emitter-Base Voltage (Vebo): 6V
5. Collector Current (Ic): 100mA
6. Power Dissipation: 150mW
7. DC Current Gain (hFE): Typically ranges from 100 to 300
8. Transition Frequency (fT): 100 MHz
9. Package: SOT-323, a small surface-mount package
10. Operating Temperature Range: -55°C to +150°C
The SBC846BWT1G is suitable for amplifying and switching applications, providing efficient operation in low-power circuits. Its compact SOT-323 package allows for space-saving designs in densely packed electronic circuits. This transistor is commonly used in consumer electronics, communication devices, and other applications requiring moderate current and voltage handling capabilities.
Pinout
The SBC846BWT1G is a general-purpose NPN bipolar junction transistor (BJT). It typically comes in a SOT-323 package, which is a small surface-mount package.
The pin count for the SBC846BWT1G is 3, corresponding to the following functions:
1. Pin 1: Base (B) - This is the control terminal of the transistor. Modulating the current to this pin controls the transistor's operation.
2. Pin 2: Emitter (E) - This terminal is the output of the transistor and is often connected to ground in common-emitter configurations.
3. Pin 3: Collector (C) - This terminal is the input or supply terminal of the transistor. It is where the main current flows into the transistor.
This transistor is used in switching and amplification applications. Its compact package makes it suitable for use in small electronic devices.
The pin count for the SBC846BWT1G is 3, corresponding to the following functions:
1. Pin 1: Base (B) - This is the control terminal of the transistor. Modulating the current to this pin controls the transistor's operation.
2. Pin 2: Emitter (E) - This terminal is the output of the transistor and is often connected to ground in common-emitter configurations.
3. Pin 3: Collector (C) - This terminal is the input or supply terminal of the transistor. It is where the main current flows into the transistor.
This transistor is used in switching and amplification applications. Its compact package makes it suitable for use in small electronic devices.
Manufacturer
The SBC846BWT1G is manufactured by ON Semiconductor, now known as onsemi. onsemi is a leading global supplier of semiconductor-based solutions, known for its comprehensive portfolio of energy-efficient solutions. The company specializes in designing and manufacturing a wide range of semiconductor components, including power and signal management, logic, discrete, and custom devices.
onsemi's products are used in various applications across multiple industries, including automotive, communications, computing, consumer electronics, industrial, medical, and military/aerospace. As a company, onsemi focuses on providing solutions that improve energy efficiency, reduce global energy use, and enhance performance in electronics. They are committed to innovation and sustainability, continually developing technologies that address the ever-evolving demands of their customers and the industries they serve.
onsemi's products are used in various applications across multiple industries, including automotive, communications, computing, consumer electronics, industrial, medical, and military/aerospace. As a company, onsemi focuses on providing solutions that improve energy efficiency, reduce global energy use, and enhance performance in electronics. They are committed to innovation and sustainability, continually developing technologies that address the ever-evolving demands of their customers and the industries they serve.
Application
The SBC846BWT1G is a general-purpose NPN bipolar junction transistor commonly used in various applications due to its small form factor and reliable performance. Key application areas include:
1. Switching Circuits: Ideal for low-power switching operations in electronic devices.
2. Amplifiers: Utilized in audio and signal amplification circuits to enhance input signals.
3. Signal Processing: Used in processing and conditioning signals in communication devices.
4. RF Circuits: Serves in radio frequency applications and wireless communication systems.
5. Consumer Electronics: Integrated into gadgets and appliances for efficient circuit control.
Its versatility makes it suitable for a wide range of electronic applications requiring reliable transistor performance.
1. Switching Circuits: Ideal for low-power switching operations in electronic devices.
2. Amplifiers: Utilized in audio and signal amplification circuits to enhance input signals.
3. Signal Processing: Used in processing and conditioning signals in communication devices.
4. RF Circuits: Serves in radio frequency applications and wireless communication systems.
5. Consumer Electronics: Integrated into gadgets and appliances for efficient circuit control.
Its versatility makes it suitable for a wide range of electronic applications requiring reliable transistor performance.
Package
The SBC846BWT1G is a NPN Bipolar Junction Transistor (BJT) from ON Semiconductor, and it comes in a SOT-323 package type. This is a small, surface-mount package, suitable for compact and high-density circuit designs.
