S34MS04G100BHI000

Images à titre indicatif uniquement

S34MS04G100BHI000

+Nomenclature

  • FabricantMémoire skyhigh

  • Pièce fabricant #S34MS04G100BHI000

  • En stock2511

365 Garantie qualité 24h/24

7*24 Garantie de service 24h/24

90-Garantie après-vente 24h/24

Garantie produit authentique

Spécifications

Attribut Valeur
Package / Case BGA-63
Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C
Series S34MS04G1
Packaging Tray
Brand SkyHigh Memory
Product Type NAND Flash
Factory Pack Quantity 210
Subcategory Memory & Data Storage
Unit Weight 0.222226 oz
Mounting Type SMD/SMT
Moisture Sensitive Yes
Supply Voltage - Max 1.95 V
Supply Voltage - Min 1.7 V
Memory Size 4 Gbit
Interface Type Parallel
Organization 512 M x 8
Active Read Current - Max 20 mA
Current - Supply (Max) 20 mA
Product NAND Flash
Timing Type Asynchronous
Data Bus Width 8 bit
Architecture Multiplane
Memory Type NAND

Présentation

Description

The S34MS04G100BHI000 is a non-volatile memory device from the Cypress Semiconductor family, specifically a NOR Flash memory. It is designed for embedded applications requiring high-speed data access and reliability. The "S34" series indicates its compatibility with the latest standards, while "MS04G" signifies that it has a storage capacity of 4 gigabits (or 512 megabytes). The "100" denotes the maximum clock frequency, typically around 100 MHz, allowing for faster read and write operations. The "BHI" indicates the package type and interface, usually featuring a parallel interface for easy integration into various electronic systems. This memory is suitable for storing firmware, configuration data, and other critical information in applications such as automotive, industrial, and consumer electronics. Its characteristics include low power consumption, a wide operating temperature range, and a high number of program/erase cycles, making it a reliable choice for developers looking to enhance performance in non-volatile storage solutions.

Equivalent

The S34MS04G100BHI000 chip, a 4Gb NOR Flash memory, is equivalent to several other products, including:
1. NXP/Microchip S29GL01GS10FIV2
2. Winbond W25Q40FV
3. Micron MT25QU04GBBB
4. Cypress S25FL004A
Ensure compatibility with your specific application, as pin configurations and performance characteristics may vary.

Features

The S34MS04G100BHI000 is a 4Gb (Gigabit) NAND flash memory device from the S34 series, designed for high-performance storage applications. Key features include:
1. Technology Type: NAND Flash, ideal for a wide range of applications including mobile devices, tablets, and automotive systems.
2. Memory Density: 4Gb capacity, providing ample storage for data-intensive applications.
3. Interface: Supports a Serial Peripheral Interface (SPI) for easy integration and communication with microcontrollers.
4. Performance: High-speed read and write operations, significantly enhancing data transfer rates.
5. Endurance: Designed for a high number of program/erase cycles, ensuring longevity and reliability in data storage.
6. Power Efficiency: Low power consumption, making it suitable for battery-operated devices.
7. Temperature Range: Operates in a wide temperature range, ensuring stability in various environmental conditions.
8. Form Factor: Compact package suitable for space-constrained designs.
This makes the S34MS04G100BHI000 a versatile choice for modern electronic devices requiring efficient and reliable storage solutions.

Pinout

The S34MS04G100BHI000 is a 4 Gb (gigabit) NAND Flash memory device with a total of 48 pins. It is designed for high-density storage applications. The primary function of this device is to provide non-volatile data storage, meaning it retains data even when power is removed.
Key functions of the pins include:
1. Data Inputs/Outputs: These pins are used for data transfer (D0-D7).
2. Command and Address Inputs: For controlling operations and addressing memory locations.
3. Chip Enable (CE): Activates the chip for operation.
4. Write Enable (WE): Controls write operations.
5. Output Enable (OE): Controls output data.
6. Ready/Busy (R/B): Indicates the status of the device (ready or busy).
7. Power Supply Pins (VCC, GND): For power supply connections.
This device is commonly used in mobile applications, consumer electronics, and embedded systems for efficient data storage and retrieval.

Manufacturer

The S34MS04G100BHI000 is manufactured by SanDisk, a subsidiary of Western Digital Corporation. SanDisk specializes in flash memory products, including SSDs (solid-state drives), memory cards, and USB flash drives. The company is known for its innovation in data storage solutions, catering to consumer, enterprise, and industrial markets. SanDisk’s products are widely used in various applications, ranging from personal electronics to data centers, emphasizing speed, reliability, and durability in their offerings.

Application

The S34MS04G100BHI000 is a 4 Gb NOR flash memory device primarily used in embedded systems. Its application areas include:
1. Consumer Electronics: Used in smartphones, tablets, and smart TVs for firmware storage.
2. Automotive: Serves as non-volatile memory for navigation systems and advanced driver-assistance systems (ADAS).
3. Industrial Equipment: Employed in programmable logic controllers (PLCs) and factory automation for data logging and firmware storage.
4. IoT Devices: Provides memory for internet-connected devices, enabling firmware updates and data retention.
5. Networking: Utilized in routers and switches for configuration storage.
Overall, it supports applications requiring reliable, high-performance memory solutions.

Package

The S34MS04G100BHI000 is packaged in a 48-ball BGA (Ball Grid Array) package, which offers a compact design suitable for high-density applications.

Produits liés à S34MS04G100BHI000