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S29GL256S90TFI010
+NomenclatureIC FLASH 256MBIT PARALLEL 56TSOP
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FabricantCypress Semiconductor Inc
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Pièce fabricant #S29GL256S90TFI010
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Package TSOP-56
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En stock3937
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
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Spécifications
| Attribut | Valeur |
| Package / Case | Tray,Tray |
| Series | GL-S |
| Part Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 256Mb (16M x 16) |
| Memory Interface | Parallel |
| Write Cycle Time - Word Page | 60ns |
| Access Time | 90 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
Présentation
Description
Key features include a 90-nanometer process technology, a 100,000 program/erase cycle endurance, and a high data retention period of up to 20 years. The "TFI010" in its designation indicates its specific package type and operating temperature range, which typically suits industrial applications. The S29GL256S90TFI010 offers a versatile solution for data storage in various applications, including automotive, networking, industrial, and consumer electronics, where reliable, non-volatile memory is essential.
Its architecture supports fast data access and programming, making it ideal for applications requiring quick boot-up times and efficient data handling.
Equivalent
1. Micron MT28EW256ABA - A similar 256 Mb NOR Flash.
2. Winbond W29GL256S - Another 256 Mb NOR Flash option.
3. Macronix MX29GL256F - Offers similar features and capacity.
When considering alternatives, ensure compatibility in terms of package type, voltage requirements, and interface to ensure proper functionality in your application.
Features
1. Architecture: Uniform 64 Kbyte sectors, allowing for flexible code and data storage.
2. Performance: Offers a fast read access time of 90 nanoseconds, enhancing data retrieval speed.
3. Interface: Supports asynchronous read operations, providing compatibility with various microcontroller and microprocessor designs.
4. Voltage Range: Operates at a single 3.0-volt supply for read, program, and erase operations, optimizing power efficiency.
5. Endurance: Offers robust data retention of up to 20 years and a high endurance of 100,000 program/erase cycles per sector.
6. Security: Includes a sector protection feature to guard against inadvertent data modification.
7. Packaging: Available in a 48-pin TSOP (Thin Small-Outline Package), which is suitable for space-constrained applications.
8. Applications: Commonly used in embedded systems, automotive, telecommunications, and consumer electronics for reliable non-volatile storage solutions.
This combination of features makes it a versatile choice for embedded applications requiring high performance and reliability.