RS1L120GNTB

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RS1L120GNTB

+Nomenclature

MOSFET N-CH 60V 12A/36A 8HSOP

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  • Pièce fabricant #RS1L120GNTB

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Spécifications

Attribut Valeur
Supplier Rohm Semiconductor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain(Id) @ 25°C 12A (Ta), 36A (Tc)
Drive Voltage(Max Rds On Min Rds On) 4.5V, 10V
Rds On(Max) @ Id Vgs 12.7mOhm @ 12A, 10V
Vgs(th)(Max) @ Id 2.7V @ 200µA
Gate Charge(Qg)(Max) @ Vgs 26 nC @ 10 V
Vgs(Max) ±20V
Input Capacitance(Ciss)(Max) @ Vds 1330 pF @ 30 V
Power Dissipation (Max) 3W (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-HSOP