Images à titre indicatif uniquement
RS1JLHMTG
+NomenclatureDIODE GEN PURP 600V 800MA SUBSMA
-
FabricantSociété taïwanaise de semi - conducteurs
-
Pièce fabricant #RS1JLHMTG
-
Fiche technique RS1JLHMTG DataSheet
-
Package DO-219AB
-
En stock2370
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | Taiwan Semiconductor Corporation |
| Package / Case | Tape & Reel (TR) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified(Io) | 800mA |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 800 mA |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 250 ns |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
| Capacitance @ Vr F | 10pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Supplier Device Package | Sub SMA |
