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RS1E200GNTB
+NomenclatureMOSFET N-CH 30V 20A 8HSOP
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FabricantROM
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Pièce fabricant #RS1E200GNTB
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En stock2288
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Spécifications
| Attribut | Valeur |
| Supplier | Rohm Semiconductor |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 20A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 4.6mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | 2.5V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 16.8 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 1080 pF @ 15 V |
| Power Dissipation (Max) | 3W (Ta), 25.1W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-HSOP |
