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RN1911FETE85LF
+NomenclatureTRANS 2NPN PREBIAS 0.1W ES6
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FabricantToshiba Semiconductor et stockage
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Pièce fabricant #RN1911FETE85LF
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Fiche technique RN1911FETE85LF DataSheet
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Package SOT-563, SOT-666
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En stock4975
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | Toshiba Semiconductor and Storage |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| TransistorType | 2 NPN - Pre-Biased (Dual) |
| Current-Collector(Ic)(Max) | 100mA |
| Voltage-CollectorEmitterBreakdown(Max) | 50V |
| Resistor-Base(R1) | 10kOhms |
| DCCurrentGain(hFE)(Min)@IcVce | 120 @ 1mA, 5V |
| VceSaturation(Max)@IbIc | 300mV @ 250µA, 5mA |
| Current-CollectorCutoff(Max) | 100nA (ICBO) |
| Frequency-Transition | 250MHz |
| Power-Max | 100mW |
| MountingType | Surface Mount |
| Package/Case | SOT-563, SOT-666 |
