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RJL5014DPP-E0#T2
+NomenclatureRJL5014DPP-E0#T2 - SILICON N CHA
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FabricantRenesas ÉLECTRONIQUE
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Pièce fabricant #RJL5014DPP-E0#T2
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En stock9413
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Spécifications
| Attribut | Valeur |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain(Id) @ 25°C | 19A (Ta) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 400mOhm @ 9.5A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 43 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 1700 pF @ 25 V |
| Power Dissipation (Max) | 35W (Tc) |
| Operating Temperature | 150°C |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FP |
