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R8010ANX
+NomenclatureMOSFET N-CH 800V 10A TO220FM
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FabricantROM
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Pièce fabricant #R8010ANX
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En stock3564
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Spécifications
| Attribut | Valeur |
| Supplier | Rohm Semiconductor |
| Package / Case | Bulk |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain(Id) @ 25°C | 10A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 560mOhm @ 5A, 10V |
| Vgs(th)(Max) @ Id | 5V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 62 nC @ 10 V |
| Vgs(Max) | ±30V |
| Input Capacitance(Ciss)(Max) @ Vds | 1750 pF @ 25 V |
| Power Dissipation (Max) | 40W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220FM |
