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QSD2030F
+NomenclatureSENSOR PHOTODIODE 880NM RADIAL
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FabricantSemi - conducteurs
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Pièce fabricant #QSD2030F
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En stock4386
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Spécifications
| Attribut | Valeur |
| Part Status | Active |
| Wavelength | 880nm |
| Spectral Range | 700nm ~ 1100nm |
| Diode Type | PIN |
| Response Time | 5ns |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Current - Dark (Typ) | 10nA |
| Active Area | 1.55mm² |
| Viewing Angle | 40° |
| Operating Temperature | -40°C ~ 100°C |
| Mounting Type | Through Hole |
| Package / Case | Radial, 5mm Dia (T 1 3/4) |
| Base Product Number | QSD2030 |
Présentation
Description
The "2030F" part of the code might indicate a course number or level, suggesting intermediate complexity suitable for students with some prior knowledge or experience. The course may include lectures, discussions, and practical exercises to help students develop a thorough understanding of the subject matter. Learning outcomes usually focus on equipping students with critical skills and insights necessary for advancing in the field or applying the knowledge in practical scenarios.
For specific details, such as the syllabus, prerequisites, or learning objectives, checking the course catalog or contacting the academic institution offering the course would be necessary.
Equivalent
Features
1. High Sensitivity: It is designed to detect low-level signals due to its high sensitivity, making it suitable for precision tasks.
2. Fast Response Time: The device offers fast switching speeds, ideal for applications requiring quick response and minimal delay.
3. Compact Size: Its compact design allows for integration into a variety of systems without demanding significant space.
4. Low Power Consumption: Optimized for energy efficiency, it helps minimize power usage in devices where it is installed.
5. Durability: Built to withstand various environmental conditions, it ensures reliable performance over a long lifespan.
6. Compatibility: It is compatible with a wide range of electronic systems, enhancing its versatility in different applications.
7. Robust Construction: The device is constructed to resist wear and tear, contributing to its longevity and consistent performance.
These features make the QSD2030F suitable for use in consumer electronics, industrial systems, and advanced computing applications.
Pinout
1. Collector: This is the positive lead of the phototransistor. It is connected to the power supply or load. The collector is responsible for collecting the charge carriers (electrons) generated when the phototransistor is exposed to infrared light.
2. Emitter: This is the negative lead. It is connected to the ground or the negative side of the circuit. The emitter discharges the charge carriers into the circuit, allowing current to flow when the phototransistor is activated by infrared light.
The QSD2030F is used in applications where detection of infrared light is required, such as remote control receivers, optoisolators, and optical encoders.