QS5U17TR

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QS5U17TR

+Nomenclature

MOSFET N-CH 30V 2A TSMT5

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  • Pièce fabricant #QS5U17TR

  • En stock7348

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Spécifications

Attribut Valeur
Supplier Rohm Semiconductor
Package / Case Tape & Reel (TR),Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain(Id) @ 25°C 2A (Ta)
Drive Voltage(Max Rds On Min Rds On) 2.5V, 4.5V
Rds On(Max) @ Id Vgs 100mOhm @ 2A, 4.5V
Vgs(th)(Max) @ Id 1.5V @ 1mA
Gate Charge(Qg)(Max) @ Vgs 3.9 nC @ 4.5 V
Vgs(Max) ±12V
Input Capacitance(Ciss)(Max) @ Vds 175 pF @ 10 V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 900mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TSMT5