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PSMN2R4-30MLDX
+NomenclatureMOSFET N-CH 30V 70A LFPAK33
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FabricantNexperia USA Inc.
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Pièce fabricant #PSMN2R4-30MLDX
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En stock6832
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Spécifications
| Attribut | Valeur |
| Supplier | Nexperia USA Inc. |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain(Id) @ 25°C | 70A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 2.4mOhm @ 25A, 10V |
| Vgs(th)(Max) @ Id | 2.2V @ 1mA |
| Gate Charge(Qg)(Max) @ Vgs | 51 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 3264 pF @ 15 V |
| Power Dissipation (Max) | 91W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK33 |
Présentation
Description
PSMN2R4-30MLDX is an N-channel enhancement-mode power MOSFET from Nexperia (formerly NXP). It is rated for 30 V drain–source voltage and has a very low on-resistance of about 2.4 mΩ (typical at VGS = 10 V), making it suitable for high-efficiency switching in DC-DC converters and motor drivers. The MLDX suffix indicates the compact surface-mount package with good thermal performance. Gate drive is typically 10 V. It supports fast switching and high current capability when properly heatsunk. Common applications include synchronous buck converters, power-switching stages in consumer electronics, automotive, and industrial power supplies. For exact electrical specs, safe operating area, and thermal data, refer to the official PSMN2R4-30MLDX datasheet.
Equivalent
I need one quick detail to give safe equivalents: do you require a direct drop‑in (same package/pins) or just matching electrical specs (VDS, RDS(on), ID, Qg)? I can then list equivalent ST, Infineon, Vishay, ON Semi, Rohm parts that match.
Features
PSMN2R4-30MLDX is a 30 V N-channel MOSFET in the MLDX package designed for high-efficiency switching. Key features:
- 30 V N-channel enhancement mode MOSFET
- On-resistance: ~2.4 mΩ (typ) at VGS = 10 V; max around 2.7–2.8 mΩ
- Low gate charge for fast switching and higher system efficiency
- Rugged performance: avalanche capability with rugged body diode
- High drain-current potential in a compact surface-mount package
- Pb-free, RoHS compliant; suitable for power supplies, motor drives, and load-switches
- Optimized for switching applications and synchronous rectification
Note: exact current rating and thermal limits depend on PCB layout and ambient temperature. For precise specs, consult the datasheet.
- 30 V N-channel enhancement mode MOSFET
- On-resistance: ~2.4 mΩ (typ) at VGS = 10 V; max around 2.7–2.8 mΩ
- Low gate charge for fast switching and higher system efficiency
- Rugged performance: avalanche capability with rugged body diode
- High drain-current potential in a compact surface-mount package
- Pb-free, RoHS compliant; suitable for power supplies, motor drives, and load-switches
- Optimized for switching applications and synchronous rectification
Note: exact current rating and thermal limits depend on PCB layout and ambient temperature. For precise specs, consult the datasheet.
Pinout
PSMN2R4-30MLDX is a single N-channel Power MOSFET (30 V, about 2.4 mΩ Rds(on)). In the ML(DX) package it has 3 electrical pins: Gate (G), Drain (D), and Source (S). The Drain is also connected to the package’s exposed tab (drain pad).
Manufacturer
Manufacturer: Nexperia.
What kind of company: Nexperia is a global semiconductor manufacturer (headquartered in Nijmegen, Netherlands) that specializes in discrete and power devices—power MOSFETs, diodes, bipolar transistors and standard logic—serving automotive, industrial and consumer electronics markets (spun out of NXP/Philips semiconductor business).
What kind of company: Nexperia is a global semiconductor manufacturer (headquartered in Nijmegen, Netherlands) that specializes in discrete and power devices—power MOSFETs, diodes, bipolar transistors and standard logic—serving automotive, industrial and consumer electronics markets (spun out of NXP/Philips semiconductor business).
Application
PSMN2R4-30MLDX is a 30 V, 2.4 mΩ N-channel MOSFET. Common application areas:
- High-efficiency switching regulators (buck/boost) and point-of-load power stages
- DC motor/fan drivers and general load switching in 12–24 V systems
- Automotive power electronics (body electronics, battery management, 12 V systems)
- Solar/battery inverters, UPS, and other power-supply stages
- Any fast-switching, low-conduction-loss switching task in consumer, industrial, or telecom power electronics
- High-efficiency switching regulators (buck/boost) and point-of-load power stages
- DC motor/fan drivers and general load switching in 12–24 V systems
- Automotive power electronics (body electronics, battery management, 12 V systems)
- Solar/battery inverters, UPS, and other power-supply stages
- Any fast-switching, low-conduction-loss switching task in consumer, industrial, or telecom power electronics
Package
PSMN2R4-30MLDX uses the MLD surface‑mount power package (DPAK / TO‑252). The trailing "X" denotes tape‑and‑reel shipping.
