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PSMN1R2-25YL
+NomenclatureMOSFETs
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FabricantLe nexperia
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Pièce fabricant #PSMN1R2-25YL
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En stock26888
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Spécifications
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Présentation
Description
PSMN1R2-25YL is a power MOSFET transistor designed for high-efficiency switching applications. Key features include:
- Low On-Resistance (RDS(on)): Enhances power efficiency by minimizing conduction losses.
- High Current Handling: Supports up to 25V drain-source voltage (VDS) and high current loads.
- Fast Switching: Optimized for applications like DC-DC converters, motor control, and power management.
- Compact Package: Typically housed in a surface-mount (e.g., D2PAK) for space-constrained designs.
Commonly used in automotive, industrial, and consumer electronics, it balances performance with thermal management. For detailed specs, refer to the datasheet.
- Low On-Resistance (RDS(on)): Enhances power efficiency by minimizing conduction losses.
- High Current Handling: Supports up to 25V drain-source voltage (VDS) and high current loads.
- Fast Switching: Optimized for applications like DC-DC converters, motor control, and power management.
- Compact Package: Typically housed in a surface-mount (e.g., D2PAK) for space-constrained designs.
Commonly used in automotive, industrial, and consumer electronics, it balances performance with thermal management. For detailed specs, refer to the datasheet.
Equivalent
Equivalent products to the PSMN1R2-25YL (NXP 25V MOSFET) include:
- Infineon IPD90N04S4-04
- STMicroelectronics STL160N4F7
- Vishay SiR156DP
- ON Semiconductor NVMYS0025NWG
These alternatives offer similar specs (25V, low RDS(on), and SMD packages). Verify exact parameters for compatibility.
- Infineon IPD90N04S4-04
- STMicroelectronics STL160N4F7
- Vishay SiR156DP
- ON Semiconductor NVMYS0025NWG
These alternatives offer similar specs (25V, low RDS(on), and SMD packages). Verify exact parameters for compatibility.
Features
The PSMN1R2-25YL is a 25V N-channel MOSFET from Nexperia, designed for high-efficiency power switching in applications like DC-DC converters and motor control.
Key Features:
- Low On-Resistance (RDS(on)): 1.2 mΩ (max) at VGS = 10V, reducing conduction losses.
- High Current Handling: Up to 180A (pulsed), suitable for high-power applications.
- Fast Switching: Optimized for high-frequency operation.
- Low Gate Charge (Qg): Enhances efficiency in switching circuits.
- AEC-Q101 Qualified: Reliable for automotive use.
- Compact LFPAK56 Package: Improves thermal performance and PCB space efficiency.
Applications:
- Automotive systems (e.g., 12V battery management).
- Power supplies, load switches, and motor drivers.
This MOSFET balances low resistance, high current capability, and robust thermal performance, making it ideal for demanding power applications.
Key Features:
- Low On-Resistance (RDS(on)): 1.2 mΩ (max) at VGS = 10V, reducing conduction losses.
- High Current Handling: Up to 180A (pulsed), suitable for high-power applications.
- Fast Switching: Optimized for high-frequency operation.
- Low Gate Charge (Qg): Enhances efficiency in switching circuits.
- AEC-Q101 Qualified: Reliable for automotive use.
- Compact LFPAK56 Package: Improves thermal performance and PCB space efficiency.
Applications:
- Automotive systems (e.g., 12V battery management).
- Power supplies, load switches, and motor drivers.
This MOSFET balances low resistance, high current capability, and robust thermal performance, making it ideal for demanding power applications.
Package
The PSMN1R2-25YL is a Power-SO8 (LFPAK) package, designed for high-efficiency power MOSFET applications. It features a compact, surface-mount design with low thermal resistance, making it suitable for high-current and high-power-density applications. The package includes an exposed thermal pad for improved heat dissipation.
