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PSMN035-150B
+NomenclaturePOWER FIELD-EFFECT TRANSISTOR, 5
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FabricantNXP USA Inc.
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Pièce fabricant #PSMN035-150B
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En stock29371
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | Rochester Electronics, LLC |
| Package / Case | Bulk |
| Part Status | Active |
Présentation
Description
To provide a general introduction, PSMN035-150B could be a component known for its specific features or specifications, such as power handling, size, material, or technological capabilities. If it's an electronic component, it might relate to transistors, diodes, or integrated circuits, often used in applications requiring reliable performance under specific conditions.
For a more detailed introduction, I recommend consulting the manufacturer's datasheet or product manual, which would provide comprehensive information about its applications, specifications, and usage guidelines. This ensures accurate understanding and integration into relevant projects or systems.
Equivalent
1. IRF540N by Infineon Technologies
2. FQP30N06L by ON Semiconductor
3. STP55NF06 by STMicroelectronics
These equivalents should be verified for specific performance characteristics like voltage, current, and power ratings to ensure compatibility for your application. Always refer to the datasheets for detailed specifications and confirm the suitability based on the exact requirements.
Features
1. Voltage and Current Ratings:
- Drain-Source Voltage (V_DS) of 150V.
- Continuous Drain Current (I_D) of 35A.
2. R_DS(on):
- Low on-state resistance, typically around 35 milliohms, which contributes to efficient energy usage.
3. Package Type:
- Typically available in a TO-220 package, which is common for discrete semiconductors and provides good thermal performance.
4. Fast Switching:
- Designed to support fast switching speeds, which is useful in high-frequency applications.
5. Applications:
- Suitable for power management, motor drives, and other applications requiring efficient high-speed switching.
6. Thermal Performance:
- Enhanced thermal performance due to the package design, allowing for better heat dissipation.
These features make the PSMN035-150B a suitable choice for various applications requiring high efficiency and reliability. Always refer to the datasheet for detailed specifications and usage guidelines.
Pinout
1. Gate (G): This pin is used to control the MOSFET's switching operation. Applying a voltage to the gate allows the flow of current between the drain and source.
2. Drain (D): This pin is where the current enters the MOSFET. It is connected to the load in most applications.
3. Source (S): This pin is where the current exits the MOSFET. It is usually connected to ground or to a lower potential in circuits.
The PSMN035-150B is utilized in various applications requiring high efficiency and fast switching, such as in power management, motor control, and power supplies. Its compact design and effective performance make it suitable for these and other similar applications.