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PMDPB42UN,115
+NomenclatureMOSFET 2N-CH 20V 3.9A HUSON6
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FabricantNXP USA Inc.
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Pièce fabricant #PMDPB42UN,115
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Fiche technique PMDPB42UN,115 DataSheet
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Package UDFN-6
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En stock5174
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | NXP USA Inc.,Rochester Electronics, LLC |
| Package / Case | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Part Status | Obsolete |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain(Id) @ 25°C | 3.9A |
| Rds On(Max) @ Id Vgs | 50mOhm @ 3.9A, 4.5V |
| Vgs(th)(Max) @ Id | 1V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 3.5nC @ 4.5V |
| Input Capacitance(Ciss)(Max) @ Vds | 185pF @ 10V |
| Power - Max | 510mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
