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PMDPB38UNE,115
+NomenclatureMOSFET 2N-CH 20V 4A HUSON6
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FabricantNXP USA Inc.
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Pièce fabricant #PMDPB38UNE,115
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Fiche technique PMDPB38UNE,115 DataSheet
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Package 6-UDFN Exposed Pad
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En stock6379
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | NXP USA Inc.,Rochester Electronics, LLC |
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Obsolete |
| FETType | 2 N-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 4A |
| RdsOn(Max)@IdVgs | 46mOhm @ 3A, 4.5V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 4.4nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 268pF @ 10V |
| Power-Max | 510mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 6-UDFN Exposed Pad |
