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PDTD113EK,115
+NomenclatureTRANS PREBIAS NPN 250MW SMT3
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FabricantNXP USA Inc.
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Pièce fabricant #PDTD113EK,115
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Fiche technique PDTD113EK,115 DataSheet
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Package TO-236-3
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En stock5758
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | NXP USA Inc. |
| Package / Case | Tape & Reel (TR) |
| Part Status | Obsolete |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector(Ic)(Max) | 500 mA |
| Voltage - Collector Emitter Breakdown(Max) | 50 V |
| Resistor - Base(R1) | 1 kOhms |
| Resistor - Emitter Base(R2) | 1 kOhms |
| DC Current Gain(h FE)(Min) @ Ic Vce | 33 @ 50mA, 5V |
| Vce Saturation(Max) @ Ib Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff(Max) | 500nA |
| Power - Max | 250 mW |
| Mounting Type | Surface Mount |
