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PD55015-E
+NomenclatureFET RF 40V 500MHZ PWRSO-10
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FabricantSemi - conducteurs optiques
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Pièce fabricant #PD55015-E
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Fiche technique PD55015-E DataSheet
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Package PowerSO-10RF (formed lead)
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En stock2325
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Spécifications
| Attribut | Valeur |
| Package / Case | Tube |
| Part Status | Active |
| Transistor Type | LDMOS |
| Frequency | 500MHz |
| Gain | 14dB |
| Voltage - Test | 12.5 V |
| Current Rating (Amps) | 5A |
| Current - Test | 150 mA |
| Power - Output | 15W |
| Voltage - Rated | 40 V |
Présentation
Description
Key features of the PD55015-E include its ability to operate at a frequency range up to 175 MHz, offering power output capabilities of up to 15 watts. It is designed to provide a high gain and efficiency, ensuring minimal power loss during operation. The transistor is encapsulated in a flange-mount package, which aids in heat dissipation and allows for more reliable performance under various operating conditions. Additionally, it features a low thermal resistance and robust design, enhancing its durability and effectiveness in demanding environments.
Overall, PD55015-E is valued for its performance in high-frequency applications, ease of integration into existing systems, and its ability to deliver consistent results in terms of power amplification.
Equivalent
Features
1. Frequency Range: It operates efficiently within the UHF frequency range, making it suitable for RF amplification.
2. Output Power: This transistor can deliver a significant output power, typically around 15 Watts.
3. Efficiency: It is designed to offer high efficiency, which is critical for RF applications to minimize power loss.
4. Die Technology: The PD55015-E utilizes advanced die technology, ensuring reliable performance and durability.
5. Package: It is available in an environmentally friendly, lead-free package, aligning with modern compliance standards.
6. Thermal Management: The device is designed with thermal stability in mind, often featuring a flange or other heat-dissipating structures.
7. Impedance Match: Designed for optimal impedance matching to ensure performance consistency in RF circuits.
8. Applications: Ideal for amplifiers in RF transmission systems, broadcast equipment, and other communication technologies.
These features make the PD55015-E a reliable choice for engineers working on RF power amplification projects.
Pinout
The PD55015-E typically comes in a PowerSO-10 package, which has a 10-pin configuration. The pin functions generally include the following:
1. RF Input: Where the RF signal is input into the transistor.
2. RF Output/Collector: This is the output pin where the amplified RF signal is delivered.
3. Emitter/Ground: This pin is used for grounding the device.
4. Bias: Pins for biasing the transistor to ensure it operates within the desired parameters.
5. DC Supply: Where the DC power supply is connected to power the transistor.
The device is designed to deliver high performance in terms of power gain, efficiency, and ruggedness, making it suitable for a variety of RF amplification applications. Always refer to the specific datasheet for detailed and accurate pin configurations and functions as they can vary by package and specific application details.
Manufacturer
Application
1. Telecommunications: Used in base station transmitters for mobile and wireless communications.
2. Broadcasting: Suitable for FM and TV transmitters.
3. Industrial, Scientific, and Medical (ISM) Applications: Employed in RF heating and drying systems.
4. Radar Systems: Utilized in certain radar applications requiring RF amplification.
5. Aerospace and Defense: Serves in communication systems within these sectors.
Its design allows for high power, efficiency, and reliability, making it suitable for these demanding RF applications.