Images à titre indicatif uniquement
NVTFS5C680NLTAG
+NomenclatureMOSFET N-CH 60V 7.82A/20A 8WDFN
-
FabricantSemi - conducteurs
-
Pièce fabricant #NVTFS5C680NLTAG
-
Fiche technique NVTFS5C680NLTAG DataSheet
-
En stock25255
365 Garantie qualité 24h/24
7*24 Garantie de service 24h/24
90-Garantie après-vente 24h/24
Garantie produit authentique
Spécifications
| Attribut | Valeur |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain(Id) @ 25°C | 7.82A (Ta), 20A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 26.5mOhm @ 10A, 10V |
| Vgs(th)(Max) @ Id | 2.2V @ 250µA |
| Gate Charge(Qg)(Max) @ Vgs | 6 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 327 pF @ 25 V |
| Power Dissipation (Max) | 3W (Ta), 20W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
Présentation
Description
This MOSFET typically features an N-channel design, meaning it uses electrons as charge carriers, and is known for its robustness and reliability in handling high currents and voltages. It is packaged to ensure efficient thermal management and might include features like ESD protection to prevent damage from electrostatic discharges.
The NVTFS5C680NLTAG is often chosen for applications where energy efficiency and compact design are crucial. Its compact form factor makes it suitable for integration into circuit boards where space is limited. Overall, this MOSFET is a critical component in modern electronic design, supporting efficient and reliable device operation.
Equivalent
1. Infineon: BSC123N08NS3
2. Vishay: SI4470DY
3. STMicroelectronics: STL140N6F7
4. Fairchild (now ON Semiconductor): FDD5614P
Always verify specific parameters like Rds(on), Vds, Id, and package compatibility before substituting.
Features
1. N-Channel MOSFET: This device is an N-channel enhancement mode field effect transistor, which is commonly used for switching and amplifying electronic signals.
2. Low On-Resistance: It offers low on-state resistance, typically resulting in reduced power loss and improved efficiency.
3. Compact Package: The MOSFET is housed in a compact package, suitable for space-constrained applications, enhancing design flexibility for engineers.
4. High-Speed Switching: It supports fast switching speeds, making it ideal for applications requiring quick response times.
5. Thermal Performance: The device is designed to dissipate heat efficiently, improving reliability and performance under various operating conditions.
6. Wide Range of Applications: The NVTFS5C680NLTAG is suitable for use in power management, motor control, DC-DC converters, and other applications where efficient power switching is required.
These features make this MOSFET a versatile component for optimizing power delivery in electronic circuits.
Pinout
This device features:
- Pin Count: 8 pins.
- Function: It serves as a medium power MOSFET capable of handling high-speed switching applications. The NVTFS5C680NLTAG is designed for use in DC-DC conversion, load switching, and power management applications.
For more specific electrical characteristics and typical applications, further consultation of the manufacturer's datasheet is recommended.
Manufacturer
Application
1. DC-DC Converters: Used in voltage regulation and power conversion for various electronics.
2. Motor Control: Facilitates efficient control of motors in industrial and consumer applications.
3. Battery Management Systems: Helps in the regulation and distribution of power in battery-operated devices.
4. Load Switches: Employed in controlling high power loads in electronic circuits.
5. Power Supplies: Integral in managing power distribution in electronic devices and systems.
These applications leverage the MOSFET's efficiency, fast switching capabilities, and low on-resistance.