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NVR4003NT3G
+NomenclatureMOSFET N-CH 30V 500MA SOT23
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FabricantSemi - conducteurs
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Pièce fabricant #NVR4003NT3G
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Package SOT-23-3
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En stock5572
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Spécifications
| Attribut | Valeur |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 500mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 4V |
| RdsOn(Max)@IdVgs | 1.5Ohm @ 10mA, 4V |
| Vgs(th)(Max)@Id | 1.4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 1.15 nC @ 5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 21 pF @ 5 V |
| PowerDissipation(Max) | 690mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
Présentation
Description
N-channel FETs like the NVR4003NT3G are valued in electronics for their efficiency in power management and their ability to handle high-speed switching operations. They are commonly used in power conversion circuits, motor drivers, and other applications requiring efficient voltage and current control. Understanding the datasheet and specifications of the NVR4003NT3G is crucial for engineers to ensure proper integration into their designs, meeting both performance and reliability standards. For precise details, consulting the specific manufacturer's datasheet is recommended.
Equivalent
1. BAT54C series - Similar dual Schottky diodes.
2. MBRA120LT3G - Comparable specifications in certain designs.
3. BAS70-04 - Alternative option with similar characteristics.
4. 1N5819 - Often used as a substitute, though not dual.
Ensure compatibility with your specific circuit requirements when selecting an equivalent.
Features
1. Voltage and Current Ratings: It typically offers a high voltage rating around 30V, ideal for a range of power supply uses and low-voltage applications. Its current handling capability is also suited for various switching operations.
2. Low On-Resistance: The MOSFET is designed with low on-resistance, which enhances efficiency by reducing power losses during conduction.
3. Fast Switching Speed: This feature is beneficial for applications requiring rapid switching, contributing to overall energy efficiency and performance.
4. Thermal Performance: It is equipped to manage heat dissipation effectively, ensuring reliability and longevity even under significant power loads.
5. Package Options: The device is available in compact packages, facilitating easy integration into space-constrained designs.
6. ESD Protection: The MOSFET includes electrostatic discharge protection, enhancing its durability and reliability in various electronic applications.
These attributes make the NVR4003NT3G a versatile component for designers focusing on efficiency and performance in power electronics.
Pinout
The SOT-23 package for the NVR4003NT3G usually has 3 pins:
1. Pin 1 (Anode 1): The anode of the first diode.
2. Pin 2 (Anode 2): The anode of the second diode.
3. Pin 3 (Cathode): Common cathode for both diodes.
This configuration allows for efficient use in situations where space and power efficiency are critical, such as in portable electronic devices. The NVR4003NT3G's Schottky diodes provide benefits like low forward voltage drop and fast recovery times, enhancing overall circuit performance.
Manufacturer
Application
1. Switching Regulators: Used for efficient voltage regulation in power supply circuits.
2. DC-DC Converters: Suitable for applications requiring conversion of direct current from one voltage level to another.
3. Motor Control: Utilized in controlling motors in various electronic devices.
4. Load Switches: Acts as an efficient switch for turning on/off loads in electronic systems.
5. Battery Management: Employed in battery protection and management systems to ensure safe operation.
These applications leverage the MOSFET's high-speed switching and low on-resistance properties for improved performance.