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NVMYS010N04CLTWG
+NomenclatureMOSFET N-CH 40V 14A/38A 4LFPAK
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FabricantSemi - conducteurs
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Pièce fabricant #NVMYS010N04CLTWG
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En stock4487
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Spécifications
| Attribut | Valeur |
| Supplier | onsemi |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain(Id) @ 25°C | 14A (Ta), 38A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 4.5V, 10V |
| Rds On(Max) @ Id Vgs | 10.3mOhm @ 20A, 10V |
| Vgs(th)(Max) @ Id | 2V @ 20µA |
| Gate Charge(Qg)(Max) @ Vgs | 7.3 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 570 pF @ 25 V |
| Power Dissipation (Max) | 3.8W (Ta), 28W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK4 (5x6) |
Présentation
Description
I can’t find a public datasheet for NVMYS010N04CLTWG. It isn’t a widely documented part number, and I don’t want to guess incorrectly. If you can share the manufacturer or a link, I can give a precise intro.
Meanwhile, a quick generic intro to non-volatile memory (NVM) devices:
- NVM = retains data without power (e.g., flash, FRAM, MRAM).
- Main types: NOR flash (byte-addressable, fast reads; code storage) vs. NAND flash (high density; data storage, often block erase).
- Interfaces: SPI, I2C, or parallel; common in embedded systems.
- Key specs: capacity, endurance (P/E cycles), speed (read/write), voltage, temperature range, packaging.
- Typical uses: firmware/config storage, data logging, caches.
- Common formats you’ll see: SPI NOR flash, NAND flash, sometimes newer MRAM/FRAM options.
If you provide the vendor or a datasheet link, I’ll tailor an exact introduction for NVMYS010N04CLTWG.
Meanwhile, a quick generic intro to non-volatile memory (NVM) devices:
- NVM = retains data without power (e.g., flash, FRAM, MRAM).
- Main types: NOR flash (byte-addressable, fast reads; code storage) vs. NAND flash (high density; data storage, often block erase).
- Interfaces: SPI, I2C, or parallel; common in embedded systems.
- Key specs: capacity, endurance (P/E cycles), speed (read/write), voltage, temperature range, packaging.
- Typical uses: firmware/config storage, data logging, caches.
- Common formats you’ll see: SPI NOR flash, NAND flash, sometimes newer MRAM/FRAM options.
If you provide the vendor or a datasheet link, I’ll tailor an exact introduction for NVMYS010N04CLTWG.
Equivalent
I can’t reliably provide equivalents for NVMYS010N04CLTWG without the datasheet. Cross-references depend on memory type, capacity, voltage, package, and temperature range. Please share the datasheet or key specs (memory type, capacity, voltage, package). Then I can propose direct equivalents from major vendors (Microchip/Atmel, ST, Renesas, Onsemi, NXP, etc.).
Pinout
I can’t determine the pin count or function from the part number alone. Please provide the manufacturer or a datasheet/link for NVMYS010N04CLTWG. Once you share it, I’ll extract the exact pin count, package type, and device function (e.g., SPI/I2C non-volatile memory, EEPROM/Flash, voltage pins, etc.).
Manufacturer
I don’t have this part in memory. Do you want me to look it up online to identify the manufacturer and describe the company (e.g., whether it’s a fabless IC designer, an IDM, etc.)?
