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NVMFS6H800NT1G
+NomenclatureMOSFET N-CH 80V 28A/203A 5DFN
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FabricantSemi - conducteurs
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Pièce fabricant #NVMFS6H800NT1G
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Package TDFN-8
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En stock4308
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Spécifications
| Attribut | Valeur |
| Package / Case | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V |
| Current - Continuous Drain(Id) @ 25°C | 28A (Ta), 203A (Tc) |
| Drive Voltage(Max Rds On Min Rds On) | 10V |
| Rds On(Max) @ Id Vgs | 2.1mOhm @ 50A, 10V |
| Vgs(th)(Max) @ Id | 4V @ 330µA |
| Gate Charge(Qg)(Max) @ Vgs | 85 nC @ 10 V |
| Vgs(Max) | ±20V |
| Input Capacitance(Ciss)(Max) @ Vds | 5530 pF @ 40 V |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
Présentation
Description
The NVMFS6H800NT1G is a power MOSFET, which stands for Metal-Oxide-Semiconductor Field-Effect Transistor. This component is used for switching and amplifying electronic signals in a variety of applications. It is part of the Power MOSFET series offered by ON Semiconductor, designed to handle high power and high efficiency demands.
Key features of the NVMFS6H800NT1G include low on-resistance and high-speed switching capabilities, which are critical for minimizing energy loss and improving performance in power conversion systems. It typically comes in a compact, surface-mount package, making it suitable for use in space-constrained environments like portable devices or compact power supplies.
Applications of this MOSFET include power management in consumer electronics, automotive systems, and industrial equipment. Its robustness and efficiency help in enhancing the overall power handling capacities of these systems. The device is also designed to ensure reliability and durability, withstanding high temperatures and electrical stress to maintain consistent operation.
Key features of the NVMFS6H800NT1G include low on-resistance and high-speed switching capabilities, which are critical for minimizing energy loss and improving performance in power conversion systems. It typically comes in a compact, surface-mount package, making it suitable for use in space-constrained environments like portable devices or compact power supplies.
Applications of this MOSFET include power management in consumer electronics, automotive systems, and industrial equipment. Its robustness and efficiency help in enhancing the overall power handling capacities of these systems. The device is also designed to ensure reliability and durability, withstanding high temperatures and electrical stress to maintain consistent operation.
Equivalent
The NVMFS6H800NT1G is a power MOSFET from ON Semiconductor. Equivalent products would be other N-channel MOSFETs with similar voltage and current ratings. Consider MOSFETs like the Vishay SiRA14DP, Infineon BSC080N06LS5, or Toshiba TPHR8504PL. Ensure to compare specific parameters like Rds(on), Vgs, and package type to confirm equivalency for your application.
Features
The NVMFS6H800NT1G is a Power MOSFET featuring advanced technology designed for high efficiency and performance. Key features include:
1. N-Channel MOSFET: Designed for applications requiring efficient switching.
2. Low On-Resistance: Offers reduced power loss and improved efficiency.
3. High Current Capability: Suitable for applications requiring significant power handling.
4. Enhanced Thermal Performance: The device is designed to dissipate heat effectively, allowing for higher power applications.
5. Compact Package: Available in a small, space-saving package suitable for compact designs.
6. Fast Switching Speed: Enables quicker response times in switching applications, enhancing performance in high-speed circuits.
7. Robust Design: Provides reliability and durability under varied operating conditions.
8. Applications: Ideal for use in power management, automotive, and industrial applications due to its robust performance and efficiency.
The NVMFS6H800NT1G is suitable for engineers looking for high-performance MOSFETs in demanding environments.
1. N-Channel MOSFET: Designed for applications requiring efficient switching.
2. Low On-Resistance: Offers reduced power loss and improved efficiency.
3. High Current Capability: Suitable for applications requiring significant power handling.
4. Enhanced Thermal Performance: The device is designed to dissipate heat effectively, allowing for higher power applications.
5. Compact Package: Available in a small, space-saving package suitable for compact designs.
6. Fast Switching Speed: Enables quicker response times in switching applications, enhancing performance in high-speed circuits.
7. Robust Design: Provides reliability and durability under varied operating conditions.
8. Applications: Ideal for use in power management, automotive, and industrial applications due to its robust performance and efficiency.
The NVMFS6H800NT1G is suitable for engineers looking for high-performance MOSFETs in demanding environments.
Pinout
The NVMFS6H800NT1G is a MOSFET produced by ON Semiconductor. It features a typical pin count for a Power MOSFET, consisting of three pins: Gate (G), Drain (D), and Source (S).
1. Gate (G): Controls the MOSFET's operation by modulating the voltage applied to it, which in turn affects the conductivity between the drain and source.
2. Drain (D): Current flows from the drain to the source when the MOSFET is in the 'on' state.
3. Source (S): Acts as the return path for the current flowing through the MOSFET.
The NVMFS6H800NT1G is designed for high-efficiency power management applications, typically used in power conversion and motor control. It offers low on-resistance and fast switching capabilities, contributing to reduced power losses in electronic circuits.
1. Gate (G): Controls the MOSFET's operation by modulating the voltage applied to it, which in turn affects the conductivity between the drain and source.
2. Drain (D): Current flows from the drain to the source when the MOSFET is in the 'on' state.
3. Source (S): Acts as the return path for the current flowing through the MOSFET.
The NVMFS6H800NT1G is designed for high-efficiency power management applications, typically used in power conversion and motor control. It offers low on-resistance and fast switching capabilities, contributing to reduced power losses in electronic circuits.
Manufacturer
The NVMFS6H800NT1G is manufactured by ON Semiconductor. ON Semiconductor is a multinational company that specializes in the design and manufacture of semiconductor components. It provides a wide range of products that serve various industries, including automotive, industrial, consumer electronics, and communications. The company focuses on energy-efficient products and solutions, offering components such as integrated circuits, diodes, transistors, and power management devices.
Application
The NVMFS6H800NT1G is a power MOSFET commonly used in various applications due to its efficiency and reliability. Key application areas include:
1. Automotive Systems: Used in electronic control units and power management systems.
2. Consumer Electronics: Ideal for power supplies, load switches, and battery management.
3. Industrial Equipment: Suited for motor control, inverters, and power factor correction.
4. Telecommunications: Utilized in power distribution and network devices.
5. Computing: Supports voltage regulation modules and power distribution in data centers.
Its low on-resistance and high current capability make it suitable for high-efficiency and high-power applications.
1. Automotive Systems: Used in electronic control units and power management systems.
2. Consumer Electronics: Ideal for power supplies, load switches, and battery management.
3. Industrial Equipment: Suited for motor control, inverters, and power factor correction.
4. Telecommunications: Utilized in power distribution and network devices.
5. Computing: Supports voltage regulation modules and power distribution in data centers.
Its low on-resistance and high current capability make it suitable for high-efficiency and high-power applications.
Package
The NVMFS6H800NT1G is a MOSFET transistor from ON Semiconductor, and it typically comes in a DFN (Dual Flat No-leads) package, specifically a Power DFN 5mm x 6mm package.
