NVMFS5C638NLT1G

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NVMFS5C638NLT1G

+Nomenclature

MOSFET N-CH 60V 26A/133A 5DFN

  • FabricantSemi - conducteurs

  • Pièce fabricant #NVMFS5C638NLT1G

  • En stock6993

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Spécifications

Attribut Valeur
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 26A (Ta), 133A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2880 pF @ 25 V
Power Dissipation (Max) 4W (Ta), 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS5

Présentation

Description

The NVMFS5C638NLT1G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient switching applications. It is manufactured by ON Semiconductor and features an N-channel configuration, which allows it to handle higher current and voltage levels effectively. With a low on-resistance (R_DS(on)), it minimizes power loss during operation, enhancing efficiency in power conversion applications.
This MOSFET is commonly used in various applications, including power supplies, motor control, and DC-DC converters. Its robust thermal performance and fast switching capabilities make it suitable for high-frequency operations. The package type typically offered is the DPAK, which allows for easy integration onto PCBs.
Key specifications include a maximum drain-source voltage (V_DS) and a continuous drain current (I_D) that provide flexibility in design. This device is ideal for engineers looking to optimize power management in their electronic designs, ensuring reliability and performance in demanding environments.

Equivalent

The NVMFS5C638NLT1G is a N-channel MOSFET. Equivalent products include the IRF3708, BSS138, and SI2302. When selecting an alternative, ensure that the key parameters such as voltage rating, current rating, R_DS(on), and package type match your application requirements for compatibility. Always consult datasheets for precise specifications.

Features

The NVMFS5C638NLT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. Key features include:
1. Low R_DS(on): Provides low on-resistance for efficient power conduction, reducing heat generation.
2. High Voltage Rating: Capable of handling drain-source voltages up to 30V, suitable for various applications.
3. Low Gate Threshold Voltage: Typically around 1-2V, allowing for efficient operation with lower drive voltages.
4. Fast Switching Speed: Ideal for high-frequency applications, facilitating quick turn-on and turn-off times.
5. Small Package: Available in a compact surface-mount package (SOT-23), facilitating space-saving designs in circuit boards.
6. Robust Thermal Performance: Designed to handle substantial power loads without compromising reliability.
These features make the NVMFS5C638NLT1G ideal for applications like DC-DC converters, motor drives, and general-purpose switching.

Pinout

The NVMFS5C638NLT1G is a power MOSFET from ON Semiconductor, specifically designed for high-efficiency applications. It has a total of 8 pins. The key functions of these pins include:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The main current-carrying terminal where the output is taken.
3. Source (S) - The terminal through which the current enters the MOSFET.
The specific pin configuration typically includes:
1. Gate
2. Source
3. Drain
4. Additional pins for various functions such as an internal diode or other features specific to the device.
For exact pin assignments and detailed specifications, refer to the manufacturer's datasheet. The NVMFS5C638NLT1G is used in applications like power management and DC-DC converters due to its low on-resistance and high-speed switching capabilities.

Manufacturer

The manufacturer of the NVMFS5C638NLT1G is ON Semiconductor. ON Semiconductor is a global supplier of semiconductor-based solutions, specializing in energy-efficient technologies. The company designs, manufactures, and sells a wide range of products, including power management, analog, sensors, logic, discrete, and custom solutions. ON Semiconductor serves various industries such as automotive, industrial, communications, consumer electronics, and computing.
Founded in 1999, the company has a strong focus on sustainability and innovation, aiming to create products that facilitate energy efficiency and environmental responsibility. With a robust portfolio of semiconductor products, ON Semiconductor plays a critical role in advancing the capabilities and performance of electronic devices across multiple sectors.

Application

The NVMFS5C638NLT1G is a power MOSFET optimized for high-performance applications. Its key application areas include:
1. Power Management: Used in DC-DC converters, voltage regulators, and power supplies to enhance efficiency.
2. Switching Applications: Ideal for high-speed switching in power electronics.
3. Motor Control: Employed in motor drivers for industrial and automotive applications.
4. Lighting Control: Suitable for LED drivers and dimming circuits.
5. Consumer Electronics: Applied in mobile devices and computing hardware for power optimization.
The device's low on-resistance and high-speed capabilities make it versatile across various sectors.

Package

The NVMFS5C638NLT1G is packaged in a DPAK (TO-252) format. This surface-mount package is designed for power MOSFET applications, providing efficient thermal management and compact size.

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